Design of power amplifiers using stacked topology

Chih Chun Shen*, Fan Hsiu Huang, Kung Hao Liang, Hong Yeh Chang, Yi Jen Chan, George D. Vendelin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effect so far. Most important is the base capacitor termination of the top transistors.

Original languageEnglish
Title of host publication2007 Asia-Pacific Microwave Conference, APMC
DOIs
StatePublished - 2007
Externally publishedYes
EventAsia-Pacific Microwave Conference, APMC 2007 - Bangkok, Thailand
Duration: 11 12 200714 12 2007

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

ConferenceAsia-Pacific Microwave Conference, APMC 2007
Country/TerritoryThailand
CityBangkok
Period11/12/0714/12/07

Keywords

  • HBT
  • Power amplifier
  • Stacked topology

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