@inproceedings{eb96d730da21452bb0af191e9cc516fa,
title = "Design of power amplifiers using stacked topology",
abstract = "This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effect so far. Most important is the base capacitor termination of the top transistors.",
keywords = "HBT, Power amplifier, Stacked topology",
author = "Shen, {Chih Chun} and Huang, {Fan Hsiu} and Liang, {Kung Hao} and Chang, {Hong Yeh} and Chan, {Yi Jen} and Vendelin, {George D.}",
year = "2007",
doi = "10.1109/APMC.2007.4554963",
language = "英语",
isbn = "1424407494",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
booktitle = "2007 Asia-Pacific Microwave Conference, APMC",
note = "Asia-Pacific Microwave Conference, APMC 2007 ; Conference date: 11-12-2007 Through 14-12-2007",
}