Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors

Ming-Jer Jeng, 胡振國

Research output: Contribution to journal › Journal Article › peer-review

Original language	American English
Pages (from-to)	163-168
Journal	Journal of the Chinese Institute of Electrical Engineering
Volume	1
Issue number	3
State	Published - 1994

Cite this

@article{88ff18502c544f5ba9b4e167c571bba6,

title = "Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors",

keywords = "CMOS circuits, Radiation hardness",

author = "Ming-Jer Jeng and 振國胡",

year = "1994",

language = "American English",

volume = "1",

pages = "163--168",

journal = "Journal of the Chinese Institute of Electrical Engineering",

issn = "1023-4465",

number = "3",

}

TY - JOUR

T1 - Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors

AU - Jeng, Ming-Jer

AU - 胡, 振國

PY - 1994

Y1 - 1994

KW - CMOS circuits

KW - Radiation hardness

M3 - Journal Article

SN - 1023-4465

VL - 1

SP - 163

EP - 168

JO - Journal of the Chinese Institute of Electrical Engineering

JF - Journal of the Chinese Institute of Electrical Engineering

IS - 3

ER -