Design of Two-Gain-Level Amplifier for $ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process

Kim Tuyen Trinh; Chia Han Lin; Hsuan Ling Kao; Hsien Chin Chiu; Nemai C. Karmakar

doi:10.1109/AMS48904.2020.9059455

Design of Two-Gain-Level Amplifier for $ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process

Kim Tuyen Trinh^*, Chia Han Lin, Hsuan Ling Kao, Hsien Chin Chiu, Nemai C. Karmakar

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A two-gain-level GaAs pHEMT amplifier adopting Cascode and common source topologies, operating at 37 GHz for radiometer active phase shifters was designed. The EM simulated results show that the developed amplifier achieves a maximum gain of 19.4 dB and gain difference of 7.6 dB. The typical noise figures of 6 dB and 7.2 dB in high and low gain states respectively within 1 GHz bandwidth. DC power consumption is about 217 mW. Within the bandwidth of interest, the gain flatness is about ± 0.5 dB; the input and output return losses are larger 9 dB at 37 GHz for both gain stages. Gain levels are obtained by changing the gate voltage in the Cascode stage. The MMIC chip is fabricated by using 0.15 μm GaAs pHEMT Process. The total core area of the chip with all the pads is 1.5 mm × 1 mm.

Original language	English
Title of host publication	2020 4th Australian Microwave Symposium, AMS 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728147840
DOIs	https://doi.org/10.1109/AMS48904.2020.9059455
State	Published - 02 2020
Event	4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia Duration: 13 02 2020 → 14 02 2020

Publication series

Name	2020 4th Australian Microwave Symposium, AMS 2020

Conference

Conference	4th Australian Microwave Symposium, AMS 2020
Country/Territory	Australia
City	Sydney
Period	13/02/20 → 14/02/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

Cascode topology
Common source
GaAs 0.15 pm process
Variable gain amplifier

Access to Document

10.1109/AMS48904.2020.9059455

Cite this

Trinh, K. T., Lin, C. H., Kao, H. L., Chiu, H. C., & Karmakar, N. C. (2020). Design of Two-Gain-Level Amplifier for $ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process. In 2020 4th Australian Microwave Symposium, AMS 2020 Article 9059455 (2020 4th Australian Microwave Symposium, AMS 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AMS48904.2020.9059455

@inproceedings{4ab3daf9defe4488970029e57dc5285b,

title = "Design of Two-Gain-Level Amplifier for $ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process",

abstract = "A two-gain-level GaAs pHEMT amplifier adopting Cascode and common source topologies, operating at 37 GHz for radiometer active phase shifters was designed. The EM simulated results show that the developed amplifier achieves a maximum gain of 19.4 dB and gain difference of 7.6 dB. The typical noise figures of 6 dB and 7.2 dB in high and low gain states respectively within 1 GHz bandwidth. DC power consumption is about 217 mW. Within the bandwidth of interest, the gain flatness is about ± 0.5 dB; the input and output return losses are larger 9 dB at 37 GHz for both gain stages. Gain levels are obtained by changing the gate voltage in the Cascode stage. The MMIC chip is fabricated by using 0.15 μm GaAs pHEMT Process. The total core area of the chip with all the pads is 1.5 mm × 1 mm.",

keywords = "Cascode topology, Common source, GaAs 0.15 pm process, Variable gain amplifier",

author = "Trinh, {Kim Tuyen} and Lin, {Chia Han} and Kao, {Hsuan Ling} and Chiu, {Hsien Chin} and Karmakar, {Nemai C.}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 4th Australian Microwave Symposium, AMS 2020 ; Conference date: 13-02-2020 Through 14-02-2020",

year = "2020",

month = feb,

doi = "10.1109/AMS48904.2020.9059455",

language = "英语",

series = "2020 4th Australian Microwave Symposium, AMS 2020",

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Trinh, KT, Lin, CH, Kao, HL , Chiu, HC & Karmakar, NC 2020, Design of Two-Gain-Level Amplifier for $ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process. in 2020 4th Australian Microwave Symposium, AMS 2020., 9059455, 2020 4th Australian Microwave Symposium, AMS 2020, Institute of Electrical and Electronics Engineers Inc., 4th Australian Microwave Symposium, AMS 2020, Sydney, Australia, 13/02/20. https://doi.org/10.1109/AMS48904.2020.9059455

Design of Two-Gain-Level Amplifier for $ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process. / Trinh, Kim Tuyen; Lin, Chia Han; Kao, Hsuan Ling et al.
2020 4th Australian Microwave Symposium, AMS 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9059455 (2020 4th Australian Microwave Symposium, AMS 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chiu, Hsien Chin

AU - Karmakar, Nemai C.

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N2 - A two-gain-level GaAs pHEMT amplifier adopting Cascode and common source topologies, operating at 37 GHz for radiometer active phase shifters was designed. The EM simulated results show that the developed amplifier achieves a maximum gain of 19.4 dB and gain difference of 7.6 dB. The typical noise figures of 6 dB and 7.2 dB in high and low gain states respectively within 1 GHz bandwidth. DC power consumption is about 217 mW. Within the bandwidth of interest, the gain flatness is about ± 0.5 dB; the input and output return losses are larger 9 dB at 37 GHz for both gain stages. Gain levels are obtained by changing the gate voltage in the Cascode stage. The MMIC chip is fabricated by using 0.15 μm GaAs pHEMT Process. The total core area of the chip with all the pads is 1.5 mm × 1 mm.

AB - A two-gain-level GaAs pHEMT amplifier adopting Cascode and common source topologies, operating at 37 GHz for radiometer active phase shifters was designed. The EM simulated results show that the developed amplifier achieves a maximum gain of 19.4 dB and gain difference of 7.6 dB. The typical noise figures of 6 dB and 7.2 dB in high and low gain states respectively within 1 GHz bandwidth. DC power consumption is about 217 mW. Within the bandwidth of interest, the gain flatness is about ± 0.5 dB; the input and output return losses are larger 9 dB at 37 GHz for both gain stages. Gain levels are obtained by changing the gate voltage in the Cascode stage. The MMIC chip is fabricated by using 0.15 μm GaAs pHEMT Process. The total core area of the chip with all the pads is 1.5 mm × 1 mm.

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ER -

Design of Two-Gain-Level Amplifier for $ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process

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Keywords

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