Determination of junction temperature in AIGaInP/GaAs light emitting diodes by self-excited photoluminescence signal

N. C. Chen; Y. N. Wang; C. Y. Tseng; Y. K. Yang

doi:10.1063/1.2345587

Determination of junction temperature in AIGaInP/GaAs light emitting diodes by self-excited photoluminescence signal

N. C. Chen^*, Y. N. Wang, C. Y. Tseng, Y. K. Yang

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

46 Scopus citations

Abstract

The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP/GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device.

Original language	English
Article number	101114
Journal	Applied Physics Letters
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.2345587
State	Published - 2006

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10.1063/1.2345587

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title = "Determination of junction temperature in AIGaInP/GaAs light emitting diodes by self-excited photoluminescence signal",

abstract = "The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP/GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device.",

author = "Chen, {N. C.} and Wang, {Y. N.} and Tseng, {C. Y.} and Yang, {Y. K.}",

year = "2006",

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volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

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AU - Chen, N. C.

AU - Wang, Y. N.

AU - Tseng, C. Y.

AU - Yang, Y. K.

PY - 2006

Y1 - 2006

N2 - The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP/GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device.

AB - The photoluminescence (PL) of the GaAs substrate excited by the electroluminescence of the active layer is adopted to determine the junction temperature in AlGaInP/GaAs light emitting diodes. Based on the Varshni equation for GaAs, the temperature measured by this approach is consistent with that obtained by the emission peak energy shift approach. As the PL signal is generated within the substrate, no calibration dependent on the device structure is necessary to determine the junction temperature of the device.

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U2 - 10.1063/1.2345587

DO - 10.1063/1.2345587

M3 - 文章

AN - SCOPUS:33748486706

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101114

ER -

Determination of junction temperature in AIGaInP/GaAs light emitting diodes by self-excited photoluminescence signal

Abstract

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