TY - GEN
T1 - Determination of LED die strength
AU - Chen, C. H.
AU - Tsai, M. Y.
AU - Tang, J. Y.
AU - Tsai, W. L.
AU - Chen, T. J.
PY - 2007
Y1 - 2007
N2 - LED (Light Emitting Diode), converting the electron current into the light through the p-n junction of semiconductor diodes, has recently gained popularity worldwide. The high-power LEDs are found in a number of applications to high-volume consumer markets, such as illumination, signaling, screen backlights, automotives and so on. In these applications, the high-power LED packages would be subjected to mechanical, thermal, and environmental loadings during manufacturing processes and services. The strength of LED dies, cut from wafers, has to be determined for the design need in order to assure good reliability of the packages in manufacturing and service. The objective of this study is to determine high-power LED die strength with size of 1×1×0.1mm by point-load test (PLT) and line-load test (LLT) associated with a plate-on-elastic-foundation configuration. The finite element analysis and the related stress formulation are used to correlate the failure force of the tests to die strength. It is found that the good consistency of the strength data (∼1.3GPa) with a minor scatter from both the point- and line-load tests is for the specimens failed on chip surfaces, but not for the ones (∼1.2 GPa and ∼0.6 GPa, respectively) failed on the ground surfaces. The inconsistency of strength data from both tests for failure on ground surfaces is found due to edge chipping, observed by scanning electron microscopy. As a result, it can be confirmed that the LED die strength has been successfully determined by these feasible and reliable test methods.
AB - LED (Light Emitting Diode), converting the electron current into the light through the p-n junction of semiconductor diodes, has recently gained popularity worldwide. The high-power LEDs are found in a number of applications to high-volume consumer markets, such as illumination, signaling, screen backlights, automotives and so on. In these applications, the high-power LED packages would be subjected to mechanical, thermal, and environmental loadings during manufacturing processes and services. The strength of LED dies, cut from wafers, has to be determined for the design need in order to assure good reliability of the packages in manufacturing and service. The objective of this study is to determine high-power LED die strength with size of 1×1×0.1mm by point-load test (PLT) and line-load test (LLT) associated with a plate-on-elastic-foundation configuration. The finite element analysis and the related stress formulation are used to correlate the failure force of the tests to die strength. It is found that the good consistency of the strength data (∼1.3GPa) with a minor scatter from both the point- and line-load tests is for the specimens failed on chip surfaces, but not for the ones (∼1.2 GPa and ∼0.6 GPa, respectively) failed on the ground surfaces. The inconsistency of strength data from both tests for failure on ground surfaces is found due to edge chipping, observed by scanning electron microscopy. As a result, it can be confirmed that the LED die strength has been successfully determined by these feasible and reliable test methods.
KW - LED die strength
KW - Light emitting diode (LED)
KW - Line loading
KW - Point loading
KW - Test method
UR - http://www.scopus.com/inward/record.url?scp=51249116267&partnerID=8YFLogxK
U2 - 10.1109/EMAP.2007.4510287
DO - 10.1109/EMAP.2007.4510287
M3 - 会议稿件
AN - SCOPUS:51249116267
SN - 1424419093
SN - 9781424419098
T3 - EMAP 2007 - International Conference on Electronic Materials and Packaging 2007
BT - EMAP 2007- International Conference on Electronic Materials and Packaging 2007
T2 - International Conference on Electronic Materials and Packaging 2007, EMAP 2007
Y2 - 19 November 2007 through 22 November 2007
ER -