@inproceedings{def0010c68f34ae09458b2bc974f0191,
title = "Determination of TSV-induced KOZ in 3D-stacked DRAMs: Simulations and experiments",
abstract = "This study is to numerically and experimentally investigate the effect of via-middle Cu through silicon via (TSV) on the mobility change (or related saturated current change, or drive current change) of transistors in the DRAM chip for 3D integration and further determine the keep-out zone (KOZ) in terms of key parameters such as SiO2 layer effect, zero-stress temperature, single and array vias, through and blind vias, as well as diameter and pitch of vias. From the results of this study, the zero-stress temperature has been successfully determined from experimental data. The KOZs based on the more than 10% change in carrier mobility (or 5% saturated current changes) have been identified by finite element numerical calculations associated with related piezoresistive coefficients. Numerical results of saturated current changes have been validated by good comparisons with experimental data. Based on the detailed analyses using this validated model, the key parameters affecting the KOZs will be presented and discussed in detail.",
keywords = "3D IC, Keep-out zone, Mobility, Stress, Through-silicon-via",
author = "Huang, {P. S.} and Tsai, {M. Y.} and Huang, {C. Y.} and Hsiu Jao and Brady Huang and Blacksmith Wu and Lin, {Y. Y.} and Will Liao and Joe Huang and Lawrence Huang and Steven Shih and Lin, {J. P.}",
year = "2012",
doi = "10.1109/IMPACT.2012.6420263",
language = "英语",
isbn = "9781467316385",
series = "Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT",
pages = "52--55",
booktitle = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 - Proceedings",
note = "2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2012 ; Conference date: 24-10-2012 Through 26-10-2012",
}