Development of highly accelerated electromigration test

Cher Ming Tan; Wei Li; Kok Tong Tan; Frankie Low

doi:10.1016/j.microrel.2006.07.034

Development of highly accelerated electromigration test

Cher Ming Tan^*, Wei Li, Kok Tong Tan, Frankie Low

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

A new methodology that combines the Finite Element Modeling (FEM), statistical methodology (Rank Limit method & Expectation and Maximization algorithm) and experiments to shorten electromigration (EM) testing time without changing the physical mechanism of the EM is developed. It is found that increasing testing temperature to 250 °C is able to shorten the average testing time by more than 80%. Verification using Transmission Electron Microscope (TEM) analysis shows that the physical mechanism is indeed remained unchanged.

Original language	English
Pages (from-to)	1638-1642
Number of pages	5
Journal	Microelectronics Reliability
Volume	46
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2006.07.034
State	Published - 09 2006
Externally published	Yes

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10.1016/j.microrel.2006.07.034

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title = "Development of highly accelerated electromigration test",

abstract = "A new methodology that combines the Finite Element Modeling (FEM), statistical methodology (Rank Limit method & Expectation and Maximization algorithm) and experiments to shorten electromigration (EM) testing time without changing the physical mechanism of the EM is developed. It is found that increasing testing temperature to 250 °C is able to shorten the average testing time by more than 80%. Verification using Transmission Electron Microscope (TEM) analysis shows that the physical mechanism is indeed remained unchanged.",

author = "Tan, {Cher Ming} and Wei Li and Tan, {Kok Tong} and Frankie Low",

year = "2006",

month = sep,

doi = "10.1016/j.microrel.2006.07.034",

language = "英语",

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AU - Tan, Cher Ming

AU - Li, Wei

AU - Tan, Kok Tong

AU - Low, Frankie

PY - 2006/9

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N2 - A new methodology that combines the Finite Element Modeling (FEM), statistical methodology (Rank Limit method & Expectation and Maximization algorithm) and experiments to shorten electromigration (EM) testing time without changing the physical mechanism of the EM is developed. It is found that increasing testing temperature to 250 °C is able to shorten the average testing time by more than 80%. Verification using Transmission Electron Microscope (TEM) analysis shows that the physical mechanism is indeed remained unchanged.

AB - A new methodology that combines the Finite Element Modeling (FEM), statistical methodology (Rank Limit method & Expectation and Maximization algorithm) and experiments to shorten electromigration (EM) testing time without changing the physical mechanism of the EM is developed. It is found that increasing testing temperature to 250 °C is able to shorten the average testing time by more than 80%. Verification using Transmission Electron Microscope (TEM) analysis shows that the physical mechanism is indeed remained unchanged.

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DO - 10.1016/j.microrel.2006.07.034

M3 - 文章

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SN - 0026-2714

VL - 46

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EP - 1642

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11

ER -

Development of highly accelerated electromigration test

Abstract

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