Device level electrical-thermal-stress coupled-field modeling

Guang Yu Huang, Cher Ming Tan*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations


The requirement of electrical-thermal-stress (ETS) modelling of semiconductor devices demands the use of finite element analysis (FEA) for device simulation. In this work, we employ a new finite element analysis software, FEMLAB for the ETS simulation of power diode, a basic building blocking for power electronic devices, and the static electrical and recovery transient characteristics of power diode are considered. The E-T model of the power diode is compared with the results from Medici, and the T-S model of the power diode is compared with the results from ANSYS. Good agreements are observed from both comparisons. The S-E model of power diode is computed using the deformation potential theory, and we demonstrate that the electron and hole mobilities of (0 1 0) biaxial compressive stressed power diode are modified by the stress due to energy splitting. The strain-induced changes of bandgap and effective mobilities cause a reduction in the diode drive current by about 5% at the maximum along [0 0 1] direction.

Original languageEnglish
Pages (from-to)1823-1827
Number of pages5
JournalMicroelectronics Reliability
Issue number9-11
StatePublished - 09 2006
Externally publishedYes


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