Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design

Feng Tso Chien; Hsien Chin Chiu; Shin Cheng Yang; Chii Wen Chen; Yi Jen Chan

Device linearity and gate voltage swing improvement by Al_0.3Ga_0.7As/In_0.15Ga_0.85As double doped-channel design

Feng Tso Chien^*
, Hsien Chin Chiu
, Shin Cheng Yang
, Chii Wen Chen
, Yi Jen Chan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Devices DC, RF, and microwave power performances between Al_0.3Ga_0.7As/In_0.15Ga_0.85As double doped-channel FET (D-DCFETs), conventional doped channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52% at V_ds = 2.5 V under a 1.9GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.

Original language	English
Pages (from-to)	1306-1311
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E84-C
Issue number	10
State	Published - 10 2001
Externally published	Yes

Keywords

Dev ice linearity
Doped-channel EFTs

Cite this

@article{8d26ca28a71d44288a721e11932e8429,

title = "Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design",

abstract = "Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52\% at Vds = 2.5 V under a 1.9GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.",

keywords = "Dev ice linearity, Doped-channel EFTs",

author = "Chien, \{Feng Tso\} and Chiu, \{Hsien Chin\} and Yang, \{Shin Cheng\} and Chen, \{Chii Wen\} and Chan, \{Yi Jen\}",

year = "2001",

month = oct,

language = "英语",

volume = "E84-C",

pages = "1306--1311",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "10",

}

TY - JOUR

T1 - Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design

AU - Chien, Feng Tso

AU - Chiu, Hsien Chin

AU - Yang, Shin Cheng

AU - Chen, Chii Wen

AU - Chan, Yi Jen

PY - 2001/10

Y1 - 2001/10

N2 - Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52% at Vds = 2.5 V under a 1.9GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.

AB - Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a double doped-channel design. The D-DCFETs provides a higher current density, higher gate breakdown voltage and improves gate operation bias range as well as frequency performance. The linear power gain and output power for D-DCFETs is 19 dB and 305 mW/mm with a power-added efficiency of 52% at Vds = 2.5 V under a 1.9GHz operation. These advantages suggest that double doped-channel design is more suitable for a high linearity and high microwave power device applications.

KW - Dev ice linearity

KW - Doped-channel EFTs

UR - https://www.scopus.com/pages/publications/0035483760

M3 - 文章

AN - SCOPUS:0035483760

SN - 0916-8524

VL - E84-C

SP - 1306

EP - 1311

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 10

ER -

Device linearity and gate voltage swing improvement by Al_0.3Ga_0.7As/In_0.15Ga_0.85As double doped-channel design

Abstract

Keywords

Other files and links

Fingerprint

Cite this