Device performance of AlGaN/GaN MOS-HEMTs using La2O3 high-k oxide gate insulator

Chao Wei Lin; Chih Wei Yang; Chao Hung Chen; Che Kai Lin; Hsien Chin Chiu

doi:10.1109/ESSDERC.2009.5331472

Device performance of AlGaN/GaN MOS-HEMTs using La₂O₃ high-k oxide gate insulator

Chao Wei Lin^*
, Chih Wei Yang
, Chao Hung Chen
, Che Kai Lin
, Hsien Chin Chiu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La₂O₃ as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La₂O₃ thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown that La₂O₃ MOS-HEMTs exhibiting the best characteristics, including the lowest gate leakage current , the largest gate voltage swing, and pulsed-mode operation. In addition, a negligible hysteresis voltage shift in the C-V curve can be improved significantly after high temperatures annealing.

Original language	English
Title of host publication	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages	435-439
Number of pages	5
DOIs	https://doi.org/10.1109/ESSDERC.2009.5331472
State	Published - 2009
Event	39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece Duration: 14 09 2009 → 18 09 2009

Publication series

Name	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference	39th European Solid-State Device Research Conference, ESSDERC 2009
Country/Territory	Greece
City	Athens
Period	14/09/09 → 18/09/09

Access to Document

10.1109/ESSDERC.2009.5331472

Cite this

Lin, C. W., Yang, C. W., Chen, C. H., Lin, C. K., & Chiu, H. C. (2009). Device performance of AlGaN/GaN MOS-HEMTs using La₂O₃ high-k oxide gate insulator. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 435-439). Article 5331472 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331472

@inproceedings{7aad302d69f64274b1ea35cf5d8de8fe,

title = "Device performance of AlGaN/GaN MOS-HEMTs using La2O3 high-k oxide gate insulator",

abstract = "AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown that La2O3 MOS-HEMTs exhibiting the best characteristics, including the lowest gate leakage current , the largest gate voltage swing, and pulsed-mode operation. In addition, a negligible hysteresis voltage shift in the C-V curve can be improved significantly after high temperatures annealing.",

author = "Lin, \{Chao Wei\} and Yang, \{Chih Wei\} and Chen, \{Chao Hung\} and Lin, \{Che Kai\} and Chiu, \{Hsien Chin\}",

year = "2009",

doi = "10.1109/ESSDERC.2009.5331472",

language = "英语",

isbn = "9781424443536",

series = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

pages = "435--439",

booktitle = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

note = "39th European Solid-State Device Research Conference, ESSDERC 2009 ; Conference date: 14-09-2009 Through 18-09-2009",

}

Lin, CW, Yang, CW, Chen, CH, Lin, CK & Chiu, HC 2009, Device performance of AlGaN/GaN MOS-HEMTs using La₂O₃ high-k oxide gate insulator. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331472, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, pp. 435-439, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 14/09/09. https://doi.org/10.1109/ESSDERC.2009.5331472

Device performance of AlGaN/GaN MOS-HEMTs using La₂O₃ high-k oxide gate insulator. / Lin, Chao Wei; Yang, Chih Wei; Chen, Chao Hung et al.
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 435-439 5331472 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Device performance of AlGaN/GaN MOS-HEMTs using La2O3 high-k oxide gate insulator

AU - Lin, Chao Wei

AU - Yang, Chih Wei

AU - Chen, Chao Hung

AU - Lin, Che Kai

AU - Chiu, Hsien Chin

PY - 2009

Y1 - 2009

N2 - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown that La2O3 MOS-HEMTs exhibiting the best characteristics, including the lowest gate leakage current , the largest gate voltage swing, and pulsed-mode operation. In addition, a negligible hysteresis voltage shift in the C-V curve can be improved significantly after high temperatures annealing.

AB - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown that La2O3 MOS-HEMTs exhibiting the best characteristics, including the lowest gate leakage current , the largest gate voltage swing, and pulsed-mode operation. In addition, a negligible hysteresis voltage shift in the C-V curve can be improved significantly after high temperatures annealing.

UR - https://www.scopus.com/pages/publications/72849150213

U2 - 10.1109/ESSDERC.2009.5331472

DO - 10.1109/ESSDERC.2009.5331472

M3 - 会议稿件

AN - SCOPUS:72849150213

SN - 9781424443536

T3 - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

SP - 435

EP - 439

BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

T2 - 39th European Solid-State Device Research Conference, ESSDERC 2009

Y2 - 14 September 2009 through 18 September 2009

ER -