Device size-dependent improved resistive switching memory performance

Amit Prakash, Siddheswar Maikap, Wei Su Chen, Heng Yuan Lee, Fred Chen, Ta Chang Tien, Chao Sung Lai, Ming Jinn Tsai

Research output: Contribution to journalJournal Article peer-review

20 Scopus citations


The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm 2 and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiOx/TiN structure. This device has shown long consecutive switching cycles (>103), read endurance of >105 times, good uniformity, and data retention of >10 4 s at 85 °C under low-current compliance of 50 μA.

Original languageEnglish
Article number6656876
Pages (from-to)409-417
Number of pages9
JournalIEEE Transactions on Nanotechnology
Issue number3
StatePublished - 05 2014


  • Filament
  • W/TiN contact
  • memory
  • resistive switching random access memory (RRAM)


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