Device size-dependent improved resistive switching memory performance

Amit Prakash; Siddheswar Maikap; Wei Su Chen; Heng Yuan Lee; Fred Chen; Ta Chang Tien; Chao Sung Lai; Ming Jinn Tsai

doi:10.1109/TNANO.2013.2282837

Device size-dependent improved resistive switching memory performance

Amit Prakash
, Siddheswar Maikap
, Wei Su Chen
, Heng Yuan Lee
, Fred Chen
, Ta Chang Tien
, Chao Sung Lai
, Ming Jinn Tsai

Department of Electronic Engineering

Chang Gung University
Industrial Technology Research Institute of Taiwan

Research output: Contribution to journal › Journal Article › peer-review

22 Scopus citations

Abstract

The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm ² and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiO_x/TiN structure. This device has shown long consecutive switching cycles (>10³), read endurance of >10⁵ times, good uniformity, and data retention of >10 ⁴ s at 85 °C under low-current compliance of 50 μA.

Original language	English
Article number	6656876
Pages (from-to)	409-417
Number of pages	9
Journal	IEEE Transactions on Nanotechnology
Volume	13
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2013.2282837
State	Published - 05 2014

Keywords

Filament
W/TiN contact
memory
resistive switching random access memory (RRAM)

Access to Document

10.1109/TNANO.2013.2282837

Cite this

@article{1e9780c24aec4a29a4028909f9634550,

title = "Device size-dependent improved resistive switching memory performance",

abstract = "The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm 2 and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiOx/TiN structure. This device has shown long consecutive switching cycles (>103), read endurance of >105 times, good uniformity, and data retention of >10 4 s at 85 °C under low-current compliance of 50 μA.",

keywords = "Filament, W/TiN contact, memory, resistive switching random access memory (RRAM)",

author = "Amit Prakash and Siddheswar Maikap and Chen, \{Wei Su\} and Lee, \{Heng Yuan\} and Fred Chen and Tien, \{Ta Chang\} and Lai, \{Chao Sung\} and Tsai, \{Ming Jinn\}",

year = "2014",

month = may,

doi = "10.1109/TNANO.2013.2282837",

language = "英语",

volume = "13",

pages = "409--417",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Device size-dependent improved resistive switching memory performance

AU - Prakash, Amit

AU - Maikap, Siddheswar

AU - Chen, Wei Su

AU - Lee, Heng Yuan

AU - Chen, Fred

AU - Tien, Ta Chang

AU - Lai, Chao Sung

AU - Tsai, Ming Jinn

PY - 2014/5

Y1 - 2014/5

N2 - The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm 2 and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiOx/TiN structure. This device has shown long consecutive switching cycles (>103), read endurance of >105 times, good uniformity, and data retention of >10 4 s at 85 °C under low-current compliance of 50 μA.

AB - The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm 2 and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiOx/TiN structure. This device has shown long consecutive switching cycles (>103), read endurance of >105 times, good uniformity, and data retention of >10 4 s at 85 °C under low-current compliance of 50 μA.

KW - Filament

KW - W/TiN contact

KW - memory

KW - resistive switching random access memory (RRAM)

UR - https://www.scopus.com/pages/publications/84901009689

U2 - 10.1109/TNANO.2013.2282837

DO - 10.1109/TNANO.2013.2282837

M3 - 文章

AN - SCOPUS:84901009689

SN - 1536-125X

VL - 13

SP - 409

EP - 417

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 3

M1 - 6656876

ER -

Device size-dependent improved resistive switching memory performance

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this