Device size-dependent improved resistive switching memory performance

Amit Prakash; Siddheswar Maikap; Wei Su Chen; Heng Yuan Lee; Fred Chen; Ta Chang Tien; Chao Sung Lai; Ming Jinn Tsai

doi:10.1109/TNANO.2013.2282837

Device size-dependent improved resistive switching memory performance

Amit Prakash, Siddheswar Maikap, Wei Su Chen, Heng Yuan Lee, Fred Chen, Ta Chang Tien, Chao Sung Lai, Ming Jinn Tsai

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

22 Scopus citations

Abstract

The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm ² and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiO_x/TiN structure. This device has shown long consecutive switching cycles (>10³), read endurance of >10⁵ times, good uniformity, and data retention of >10 ⁴ s at 85 °C under low-current compliance of 50 μA.

Original language	English
Article number	6656876
Pages (from-to)	409-417
Number of pages	9
Journal	IEEE Transactions on Nanotechnology
Volume	13
Issue number	3
DOIs	https://doi.org/10.1109/TNANO.2013.2282837
State	Published - 05 2014

Keywords

Filament
W/TiN contact
memory
resistive switching random access memory (RRAM)

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10.1109/TNANO.2013.2282837

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@article{1e9780c24aec4a29a4028909f9634550,

title = "Device size-dependent improved resistive switching memory performance",

abstract = "The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm 2 and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiOx/TiN structure. This device has shown long consecutive switching cycles (>103), read endurance of >105 times, good uniformity, and data retention of >10 4 s at 85 °C under low-current compliance of 50 μA.",

keywords = "Filament, W/TiN contact, memory, resistive switching random access memory (RRAM)",

author = "Amit Prakash and Siddheswar Maikap and Chen, \{Wei Su\} and Lee, \{Heng Yuan\} and Fred Chen and Tien, \{Ta Chang\} and Lai, \{Chao Sung\} and Tsai, \{Ming Jinn\}",

year = "2014",

month = may,

doi = "10.1109/TNANO.2013.2282837",

language = "英语",

volume = "13",

pages = "409--417",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Device size-dependent improved resistive switching memory performance

AU - Prakash, Amit

AU - Maikap, Siddheswar

AU - Chen, Wei Su

AU - Lee, Heng Yuan

AU - Chen, Fred

AU - Tien, Ta Chang

AU - Lai, Chao Sung

AU - Tsai, Ming Jinn

PY - 2014/5

Y1 - 2014/5

N2 - The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm 2 and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiOx/TiN structure. This device has shown long consecutive switching cycles (>103), read endurance of >105 times, good uniformity, and data retention of >10 4 s at 85 °C under low-current compliance of 50 μA.

AB - The device size-dependent resistive memory switching and improvement in the switching performance in a CMOS compatible W/TiN contact device is reported as compared to W/W, Al/TiN, and Ir/TiN contacts, due to oxygen-rich layer formation at the W/filament interface. A small device area of 0.15 × 0.15 μm 2 and interface between the electrodes has been observed from the transmission electron microscopy images. The fabricated small size devices have shown improved switching endurance with a small current compliance of 50 μA without separate forming process. The reactivity of electrode materials and its interface play an important role in obtaining the stable resistive switching behavior in W/TiN contact-formed W/TiOx/TiN structure. This device has shown long consecutive switching cycles (>103), read endurance of >105 times, good uniformity, and data retention of >10 4 s at 85 °C under low-current compliance of 50 μA.

KW - Filament

KW - W/TiN contact

KW - memory

KW - resistive switching random access memory (RRAM)

UR - https://www.scopus.com/pages/publications/84901009689

U2 - 10.1109/TNANO.2013.2282837

DO - 10.1109/TNANO.2013.2282837

M3 - 文章

AN - SCOPUS:84901009689

SN - 1536-125X

VL - 13

SP - 409

EP - 417

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 3

M1 - 6656876

ER -

Device size-dependent improved resistive switching memory performance

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Keywords

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