Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Hsien Chin Chiu; Wen Yu Lin; Chia Yi Chou; Shih Hsien Yang; Kai Di Mai; Pei Chin Chiu; W. J. Hsueh; Jen Inn Chyi

doi:10.1016/j.mee.2015.01.017

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Hsien Chin Chiu^*, Wen Yu Lin, Chia Yi Chou, Shih Hsien Yang, Kai Di Mai, Pei Chin Chiu, W. J. Hsueh, Jen Inn Chyi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Microelectronic Engineering
Volume	138
DOIs	https://doi.org/10.1016/j.mee.2015.01.017
State	Published - 20 04 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

AlSb
Iridium
Schottky barrier height
Stability

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10.1016/j.mee.2015.01.017

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title = "Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal",

abstract = "In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.",

keywords = "AlSb, Iridium, Schottky barrier height, Stability",

author = "Chiu, {Hsien Chin} and Lin, {Wen Yu} and Chou, {Chia Yi} and Yang, {Shih Hsien} and Mai, {Kai Di} and Chiu, {Pei Chin} and Hsueh, {W. J.} and Chyi, {Jen Inn}",

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doi = "10.1016/j.mee.2015.01.017",

language = "英语",

volume = "138",

pages = "17--20",

journal = "Microelectronic Engineering",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

AU - Chiu, Hsien Chin

AU - Lin, Wen Yu

AU - Chou, Chia Yi

AU - Yang, Shih Hsien

AU - Mai, Kai Di

AU - Chiu, Pei Chin

AU - Hsueh, W. J.

AU - Chyi, Jen Inn

PY - 2015/4/20

Y1 - 2015/4/20

N2 - In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

AB - In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

KW - AlSb

KW - Iridium

KW - Schottky barrier height

KW - Stability

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U2 - 10.1016/j.mee.2015.01.017

DO - 10.1016/j.mee.2015.01.017

M3 - 文章

AN - SCOPUS:84921953279

SN - 0167-9317

VL - 138

SP - 17

EP - 20

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Abstract

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Keywords

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