@inproceedings{d842b2a45ddb4855acf3b95baf58c6b4,
title = "Differential Hall analysis of ultrashallow carrier profiles using X-ray photoelectron spectroscopy for nanometer depth resolution",
abstract = "In this study, differential Hall measurement (DHM) was developed to measure the carrier profiles in phosphorus doped ultrashallow junctions (USJs). Experiments using uniform phosphorus profiles in silicon on insulator (SOI) wafers demonstrated that the growth rate of the native oxide strongly depends on the phosphorus doping level. Therefore, the thickness of native oxide was monitored by X-ray photoelectron spectroscopy (XPS) to achieve nanometer depth resolution during DHM. The DHM method was applied to investigate the deactivation of phosphorus in laser annealed USJs. The DHM results indicate carrier profile redistribution near the surface due to uphill diffusion caused by phosphorus deactivation.",
keywords = "Differential Hall measurement (DHM), X-ray photoelectron spectroscopy (XPS), ultrashallow junctions",
author = "Ling, \{Yu Ting\} and Su, \{Wan Ting\} and Pi, \{Tun Wen\} and Chang, \{Ruey Dar\}",
year = "2012",
doi = "10.1063/1.4766512",
language = "英语",
isbn = "9780735411098",
series = "AIP Conference Proceedings",
pages = "152--155",
booktitle = "Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology",
note = "19th International Conference on Ion Implantation Technology 2012, IIT 2012 ; Conference date: 25-06-2012 Through 29-06-2012",
}