Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes

Y. S. Wang*, N. C. Chen, J. F. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.

Original languageEnglish
Title of host publication2011 Int. Quantum Electr. Conf., IQEC 2011 Conf Lasers Electro-Optics, CLEO Pacific Rim 2011 Incorporating Australasian Conf. on Optics, Lasers Spectrosc. Australian Conf. Optical Fibre Technol.- Conf
Pages1222-1224
Number of pages3
DOIs
StatePublished - 2011
Event2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011 - Sydney, NSW, Australia
Duration: 28 08 201101 09 2011

Publication series

Name2011 Int. Quantum Electron. Conf., IQEC 2011 and Conf. Lasers and Electro-Optics, CLEO Pacific Rim 2011 Incorporating the Australasian Conf. Optics, Lasers and Spectroscopy and the Australian Conf.

Conference

Conference2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011
Country/TerritoryAustralia
CitySydney, NSW
Period28/08/1101/09/11

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