Abstract
MOS-based technology has become the default standard for high-density logic designs for several reasons. The most obvious is that MOSFETs can be made with side dimensions of <0.1 mm (107 m), allowing for complex logic functions to be constructed in small areas. The section is an investigation of the basics of designing and characterizing logic gates in an MOS technology.
| Original language | English |
|---|---|
| Title of host publication | Analog and VLSI Circuits |
| Publisher | CRC Press |
| Pages | 437-470 |
| Number of pages | 34 |
| ISBN (Electronic) | 9781420058925 |
| ISBN (Print) | 1420058916, 9781420058918 |
| State | Published - 01 01 2009 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2009 by Taylor & Francis Group, LLC.