Abstract
We report the investigation on the compositional-pulling effect of crystalline AlxGa1-xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the AlxGa1-xN (0<x<0.3) layers, which accompany the different optical phenomena arising from the change of the band gap. The band gap variation of the 1.7 μm AlxGa 1-xN epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.
| Original language | English |
|---|---|
| Pages (from-to) | 225-228 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 290 |
| Issue number | 1 |
| DOIs | |
| State | Published - 15 04 2006 |
Keywords
- A1. Cathodoluminescence
- A1. Pulling effect
- B1. AlGaN
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