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Direct evidence of compositional pulling effect in AlxGa 1-xN epilayers

  • H. Y. Lin
  • , Y. F. Chen*
  • , T. Y. Lin
  • , C. F. Shih
  • , K. S. Liu
  • , N. C. Chen
  • *Corresponding author for this work
  • National Taiwan University
  • National Taiwan Ocean University
  • National Tsing Hua University

Research output: Contribution to journalJournal Article peer-review

36 Scopus citations

Abstract

We report the investigation on the compositional-pulling effect of crystalline AlxGa1-xN/(0 0 0 1) sapphire epilayers by cross-sectional cathodoluminescence (CL) and energy-dispersive X-ray (EDX) analyses. Direct evidence for the compositional distribution was found in the AlxGa1-xN (0<x<0.3) layers, which accompany the different optical phenomena arising from the change of the band gap. The band gap variation of the 1.7 μm AlxGa 1-xN epilayers with the Al content rising from x=11% to 30% was observed. It is consistent with the result of depth-resolved CL spectra acquired with increasing electron energies, which can also be used to reveal the spatial composition distribution along the growth direction. We emphasize here that the selective-wavelength CL image is a very powerful tool in exploring the correlation between the specific emission and the composition of inhomogeneous alloys.

Original languageEnglish
Pages (from-to)225-228
Number of pages4
JournalJournal of Crystal Growth
Volume290
Issue number1
DOIs
StatePublished - 15 04 2006

Keywords

  • A1. Cathodoluminescence
  • A1. Pulling effect
  • B1. AlGaN

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