Direct extraction of equivalent circuit parameters for balun on silicon substrate

Yong Zhong Xiong; T. Hui Teo; J. S. Fu

doi:10.1109/TED.2005.851851

Direct extraction of equivalent circuit parameters for balun on silicon substrate

Yong Zhong Xiong^*, T. Hui Teo, J. S. Fu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

A direct extraction technique of equivalent circuit parameters for three-port balun on silicon substrate is developed. The extraction is based on two-port measurement instead of three-port by grounding the third port. This technique greatly simplified the measurement and extraction process. The extracted results are in excellent agreement with the measured results up to 10 GHz.

Original language	English
Pages (from-to)	1915-1917
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	8
DOIs	https://doi.org/10.1109/TED.2005.851851
State	Published - 08 2005
Externally published	Yes

Keywords

Balun
CMOS
Direct extraction
Equivalent circuit

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10.1109/TED.2005.851851

Cite this

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title = "Direct extraction of equivalent circuit parameters for balun on silicon substrate",

abstract = "A direct extraction technique of equivalent circuit parameters for three-port balun on silicon substrate is developed. The extraction is based on two-port measurement instead of three-port by grounding the third port. This technique greatly simplified the measurement and extraction process. The extracted results are in excellent agreement with the measured results up to 10 GHz.",

keywords = "Balun, CMOS, Direct extraction, Equivalent circuit",

author = "Xiong, {Yong Zhong} and Teo, {T. Hui} and Fu, {J. S.}",

year = "2005",

month = aug,

doi = "10.1109/TED.2005.851851",

language = "英语",

volume = "52",

pages = "1915--1917",

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AU - Xiong, Yong Zhong

AU - Teo, T. Hui

AU - Fu, J. S.

PY - 2005/8

Y1 - 2005/8

N2 - A direct extraction technique of equivalent circuit parameters for three-port balun on silicon substrate is developed. The extraction is based on two-port measurement instead of three-port by grounding the third port. This technique greatly simplified the measurement and extraction process. The extracted results are in excellent agreement with the measured results up to 10 GHz.

AB - A direct extraction technique of equivalent circuit parameters for three-port balun on silicon substrate is developed. The extraction is based on two-port measurement instead of three-port by grounding the third port. This technique greatly simplified the measurement and extraction process. The extracted results are in excellent agreement with the measured results up to 10 GHz.

KW - Balun

KW - CMOS

KW - Direct extraction

KW - Equivalent circuit

UR - http://www.scopus.com/inward/record.url?scp=23344433692&partnerID=8YFLogxK

U2 - 10.1109/TED.2005.851851

DO - 10.1109/TED.2005.851851

M3 - 文章

AN - SCOPUS:23344433692

SN - 0018-9383

VL - 52

SP - 1915

EP - 1917

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Direct extraction of equivalent circuit parameters for balun on silicon substrate

Abstract

Keywords

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