Direct patterning of silicon nitride thin film by projection photoablation for fabricating thin-film transistor liquid crystal displays

The direct patterning of silicon nitride (SiN_x) thin films on glass substrates using a KrF 248 nm excimer laser has been investigated. The direct laser patterning process offers a cost-effective alternative to wet- and dry-etch lithographies for the fabrication of thin-film transistor liquid crystal displays (TFT-LCDs). It is demonstrated that direct laser patterning can effectively pattern 200nm SiN_x thin films at the laser energy density of 1350mJ/cm². We can therefore reduce the cost and process time by using excimer laser patterning and eliminating the need for wet- and dry-etch processes.