Distinction between interfacial layer effect and trap passivation effect of N2 plasma treatment on LTPS-TFTs

William Cheng Yu Ma*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

In this paper, N2 plasma surface treatment on high performance low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric is demonstrated. A significant performance improvement by N 2 plasma surface treatment is observed, including the threshold voltage VTH reduction ∼ -0.94 V, subthreshold swing S.S. improvement from 0.227 V/dec. to 0.188 V/dec., field effect mobility μFE enhancement ∼ +61% and driving current Idrv enhancement ∼ +95%. The individual impacts of interfacial layer growth effect and trap passivation effect of poly-Si channel film are investigated by the plasma induced interfacial layer (PIL) removal process. The results show that the PIL growth effect has more contribution to the improvement of V TH reduction and Idrv enhancement than the trap passivation effect of poly-Si channel film. Consequently, the interfacial layer engineering would be very important for the development of high performance LTPS-TFTs.

Original languageEnglish
Pages (from-to)45-48
Number of pages4
JournalSolid-State Electronics
Volume100
DOIs
StatePublished - 10 2014
Externally publishedYes

Keywords

  • Interfacial layer
  • Plasma passivation
  • Thin-film transistors (TFTs)

Fingerprint

Dive into the research topics of 'Distinction between interfacial layer effect and trap passivation effect of N2 plasma treatment on LTPS-TFTs'. Together they form a unique fingerprint.

Cite this