Dopamine-sensing characteristics and mechanism by using n2 /o2 annealing in pt/ti/n-si structure

Yi Pin Chen, Anisha Roy, Ping Hsuan Wu, Shih Yin Huang, Siddheswar Maikap*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

Dopamine detection by using N2 /O2 annealing in a Pt/Ti/n-Si structure is investigated for the first time. To achieve repeatable and stable dopamine detection, a Pt membrane is annealed at elevated temperatures of 500 to 700 C. N2 /O2 gas ambient is used to optimize the membrane. The Pt membrane with thicknesses from 5 to 2 nm is optimized. Novel Pt/Ti/n-Si Schottky contact in a metal–electrolyte–membrane–silicon (MEMS) structure detects dopamine with a low concentration of 1 pM. The Pt membrane with N2 ambient annealing shows the lowest concentration of dopamine sensing with a small volume of 10 µL, acceptable stability, and repeatability. Scan rate-dependent dopamine concentration sensing is also investigated in the two-terminal measurement method. This study is useful for the early diagnosis of Parkinson’s disease in the near future.

Original languageEnglish
Article number3146
JournalElectronics (Switzerland)
Volume10
Issue number24
DOIs
StatePublished - 01 12 2021

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

  • CV characteristics
  • Dopamine
  • N /O annealing
  • Platinum membrane
  • Schottky contact

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