Abstract
InGaAs epilayers were grown on the semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr2O3 doped into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystal quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of those InGaAs grown layers will decrease from a value of 1.6 × 1016 to 2.0 × 1015 cm-3. Their correspondent 77 K mobility also significantly increases from a value of 15321 to 32171 cm2/V-s. The photoluminescence (PL) spectra of Pr2O3 doped InGaAs epilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the grown layers exhibit a pure crystal property.
Original language | English |
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Pages | 413-416 |
Number of pages | 4 |
State | Published - 1996 |
Externally published | Yes |
Event | Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom Duration: 09 10 1996 → 12 10 1996 |
Conference
Conference | Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) |
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City | Sinaia, Rom |
Period | 09/10/96 → 12/10/96 |