Doping properties of Pr2O3 associate InGaAs liquid phase epitaxial growths

C. C. Liu*, L. B. Chang, Y. C. Cheng

*Corresponding author for this work

Research output: Contribution to conferenceConference Paperpeer-review

Abstract

InGaAs epilayers were grown on the semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr2O3 doped into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystal quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of those InGaAs grown layers will decrease from a value of 1.6 × 1016 to 2.0 × 1015 cm-3. Their correspondent 77 K mobility also significantly increases from a value of 15321 to 32171 cm2/V-s. The photoluminescence (PL) spectra of Pr2O3 doped InGaAs epilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the grown layers exhibit a pure crystal property.

Original languageEnglish
Pages413-416
Number of pages4
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom
Duration: 09 10 199612 10 1996

Conference

ConferenceProceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
CitySinaia, Rom
Period09/10/9612/10/96

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