Doping properties of Pr2O3 associate InGaAs liquid phase epitaxial growths

C. C. Liu; L. B. Chang; Y. C. Cheng

Doping properties of Pr₂O₃ associate InGaAs liquid phase epitaxial growths

C. C. Liu^*
, L. B. Chang
, Y. C. Cheng

^*Corresponding author for this work

National Defense University Taiwan

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

InGaAs epilayers were grown on the semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr₂O₃ doped into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystal quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of those InGaAs grown layers will decrease from a value of 1.6 × 10¹⁶ to 2.0 × 10¹⁵ cm^-3. Their correspondent 77 K mobility also significantly increases from a value of 15321 to 32171 cm²/V-s. The photoluminescence (PL) spectra of Pr₂O₃ doped InGaAs epilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the grown layers exhibit a pure crystal property.

Original language	English
Pages	413-416
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom Duration: 09 10 1996 → 12 10 1996

Conference

Conference	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
City	Sinaia, Rom
Period	09/10/96 → 12/10/96

Cite this

@conference{74bfdb0c3d4a4803953116fb7b5a2f9a,

title = "Doping properties of Pr2O3 associate InGaAs liquid phase epitaxial growths",

abstract = "InGaAs epilayers were grown on the semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr2O3 doped into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystal quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of those InGaAs grown layers will decrease from a value of 1.6 × 1016 to 2.0 × 1015 cm-3. Their correspondent 77 K mobility also significantly increases from a value of 15321 to 32171 cm2/V-s. The photoluminescence (PL) spectra of Pr2O3 doped InGaAs epilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the grown layers exhibit a pure crystal property.",

author = "Liu, \{C. C.\} and Chang, \{L. B.\} and Cheng, \{Y. C.\}",

year = "1996",

language = "英语",

pages = "413--416",

note = "Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) ; Conference date: 09-10-1996 Through 12-10-1996",

}

TY - CONF

T1 - Doping properties of Pr2O3 associate InGaAs liquid phase epitaxial growths

AU - Liu, C. C.

AU - Chang, L. B.

AU - Cheng, Y. C.

PY - 1996

Y1 - 1996

N2 - InGaAs epilayers were grown on the semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr2O3 doped into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystal quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of those InGaAs grown layers will decrease from a value of 1.6 × 1016 to 2.0 × 1015 cm-3. Their correspondent 77 K mobility also significantly increases from a value of 15321 to 32171 cm2/V-s. The photoluminescence (PL) spectra of Pr2O3 doped InGaAs epilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the grown layers exhibit a pure crystal property.

AB - InGaAs epilayers were grown on the semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr2O3 doped into growth melt during each epitaxial process. Most grown layers yield mirror-like surfaces and good crystal quality. Without the prebaking process, the corresponding Hall measurements indicate that n-type background concentration of those InGaAs grown layers will decrease from a value of 1.6 × 1016 to 2.0 × 1015 cm-3. Their correspondent 77 K mobility also significantly increases from a value of 15321 to 32171 cm2/V-s. The photoluminescence (PL) spectra of Pr2O3 doped InGaAs epilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the grown layers exhibit a pure crystal property.

UR - https://www.scopus.com/pages/publications/0030395770

M3 - 论文

AN - SCOPUS:0030395770

SP - 413

EP - 416

T2 - Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)

Y2 - 9 October 1996 through 12 October 1996

ER -

Doping properties of Pr₂O₃ associate InGaAs liquid phase epitaxial growths

Abstract

Conference

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