@inproceedings{0b1bdd4eb4e34a38b81dc3cc83e9967b,
title = "Dual transformer injection locked frequency divider using GaAs E/D-mode PHEMTs process",
abstract = "This letter proposes a new divide-by-2 pHEMT injection locked frequency divider (ILFD) fabricated by 0.5-μm GaAs ED-Mode pHEMTs process and describes the operation principle of the dual-transformer ILFD. First transformer was applied to replace two inductors of cross-couple LC-tank oscillator circuit. The injection signal of ILFD transmits into a transistor through the second transformer which consisted of a band-pass filter achieving a high injection signal power and wide locking range. The measurement results show that the divider's free-running frequency were from 6.47 to 9.54 GHz (32.2%) with 3 V supply voltage. With an incident power of 0 dBm, the locking range is 3.04 GHz from the incident frequency 16.41 to 19.45 GHz (15.6%). The measured phase noise of free running VCO is -92.2 dBc/Hz at 1 MHz offset frequency at 9.45 GHz and this value of the locked ILFD is -128.4 dBc/Hz ,which is 36.2 dB lower than the free running VCO. The core power consumption was 42 mW.",
keywords = "Injection-locked frequency divider, Low phase-noise, Transformer, Voltage-controlled oscillator",
author = "Ke, {Po Yu} and Chiu, {Hsien Chin} and Fu, {Jeffrey S.}",
year = "2009",
doi = "10.1109/csics.2009.5315693",
language = "英语",
isbn = "9781424451913",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
booktitle = "2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2009 - Technical Digest 2009",
note = "2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2009 - Integrated Circuits in GaAs, InP, SiGe, GaN, and Other Compound Semiconductors ; Conference date: 11-10-2009 Through 14-10-2009",
}