Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors

Chih Yang Chen; Tong Yi Wang; Ming Wen Ma; Wei Cheng Chen; Hsiao Yi Lin; Kuan Lin Yeh; Shen De Wang; Tan Fu Lei

Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors

Chih Yang Chen^*, Tong Yi Wang, Ming Wen Ma, Wei Cheng Chen, Hsiao Yi Lin, Kuan Lin Yeh, Shen De Wang, Tan Fu Lei

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition, the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated, and a physical model is proposed to explain the mechanism.

Original language	English
Title of host publication	AD'07 - Proceedings of Asia Display 2007
Pages	1233-1237
Number of pages	5
State	Published - 2007
Externally published	Yes
Event	Asia Display 2007, AD'07 - Shanghai, China Duration: 12 03 2007 → 16 03 2007

Publication series

Name	AD'07 - Proceedings of Asia Display 2007
Volume	2

Conference

Conference	Asia Display 2007, AD'07
Country/Territory	China
City	Shanghai
Period	12/03/07 → 16/03/07

Keywords

Dynamic negative bias temperature instability
Thin-film transistor

Cite this

@inproceedings{7aaaf87e5ee04f2faf514d3a645efe98,

title = "Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors",

abstract = "Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition, the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated, and a physical model is proposed to explain the mechanism.",

keywords = "Dynamic negative bias temperature instability, Thin-film transistor",

author = "Chen, {Chih Yang} and Wang, {Tong Yi} and Ma, {Ming Wen} and Chen, {Wei Cheng} and Lin, {Hsiao Yi} and Yeh, {Kuan Lin} and Wang, {Shen De} and Lei, {Tan Fu}",

year = "2007",

language = "英语",

isbn = "9787561752289",

series = "AD'07 - Proceedings of Asia Display 2007",

pages = "1233--1237",

booktitle = "AD'07 - Proceedings of Asia Display 2007",

note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",

}

TY - GEN

T1 - Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors

AU - Chen, Chih Yang

AU - Wang, Tong Yi

AU - Ma, Ming Wen

AU - Chen, Wei Cheng

AU - Lin, Hsiao Yi

AU - Yeh, Kuan Lin

AU - Wang, Shen De

AU - Lei, Tan Fu

PY - 2007

Y1 - 2007

N2 - Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition, the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated, and a physical model is proposed to explain the mechanism.

AB - Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition, the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated, and a physical model is proposed to explain the mechanism.

KW - Dynamic negative bias temperature instability

KW - Thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=77958031226&partnerID=8YFLogxK

M3 - 会议稿件

AN - SCOPUS:77958031226

SN - 9787561752289

T3 - AD'07 - Proceedings of Asia Display 2007

SP - 1233

EP - 1237

BT - AD'07 - Proceedings of Asia Display 2007

T2 - Asia Display 2007, AD'07

Y2 - 12 March 2007 through 16 March 2007

ER -

Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors

Abstract

Publication series

Conference

Keywords

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