Dynamic negative bias temperature instability (NBTI) of low-temperature polycrystalline silicon (LTPS) thin-film transistors

J. C. Liao*, Y. K. Fang, C. H. Kao, C. Y. Cheng

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

25 Scopus citations

Abstract

The dynamic negative bias temperature instability (NBTI) on low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated in detail. Experimental results revealed the threshold voltage shift of LTPS TFTs after the NBTI stress decreases with increasing frequency, which is different from the frequency-independence of conventional CMOSFET. Under a low frequency stress, the capacitance-voltage measurement with various frequencies implied that a larger quantity of inversion holes was trapped in the grain boundary. Thus, the difference of the transit time between the grain boundary and Si/SiO2 interface dominates the LTPS TFTs dynamic NBTI behaviors and results in the dependence of frequency.

Original languageEnglish
Pages (from-to)477-479
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number5
DOIs
StatePublished - 05 2008

Keywords

  • Dynamic stress
  • Grain boundary
  • Low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)
  • Negative bias temperature instability (NBTI)
  • Si/SiO interface

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