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Dynamic-static hybrid near-threshold-voltage adder design for ultra-low power applications

  • Xin Xiang Lian*
  • , I. Chyn Wey
  • , Chien Chang Peng
  • , Zhi Qun Cheng
  • *Corresponding author for this work
  • Hangzhou Dianzi University
  • Chang Gung University

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

Near-threshold-voltage (NTV) circuit is to set the operating voltage near the threshold voltage of CMOS transistors to pursue the maximum energy efficiency. However, the characteristics for each logic family are quite different under NTV while comparing to its operation under normal supply voltage. In this paper, we proposed a new dynamic-static hybrid near threshold voltage adder design. The proposed keeper design can suppress the leakage current and avoid signal contention in the dynamic CMOS circuit, which lets the dynamic CMOS logic family can be adapted to NTV environment with excellent speed characteristics and higher energy efficiency. The proposed low leakage dynamic-static hybrid NTV 32-bits adder design can achieve the maximum energy efficiency with 161.7% enhancement as compared to the mirror adder under NTV with 0.3 V.

Original languageEnglish
Article number20141122
JournalIEICE Electronics Express
Volume12
Issue number3
DOIs
StatePublished - 16 01 2015

Bibliographical note

Publisher Copyright:
© IEICE 2015.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Energy efficiency
  • Near-threshold voltage

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