Edge spontaneous emission from 850 nm vertical-cavity surface emitting lasers

N. C. Chen*, C. Y. Lu, J. W. Chien, S. W. Chiu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

The edge emission from 850 nm vertical-cavity surface emitting lasers has a much larger linewidth and a larger redshift coefficient than the surface emission. These differences explain why the threshold current increased asymmetrically when temperature deviated from the temperature associated with the lowest threshold current. The gradient of the edge intensity-current (L-I) curve declined when current exceeded the threshold value. This decline indicates the competition between stimulated emission and other mechanisms for recombining carriers. Thus, the optimal lasing power can be derived from the edge L-I curve, and the deviation from the measured value is the sum of unwanted optical loss.

Original languageEnglish
Pages (from-to)2449-2452
Number of pages4
JournalOptics and Laser Technology
Volume44
Issue number8
DOIs
StatePublished - 11 2012

Keywords

  • Edge spontaneous emission
  • Threshold current
  • VCSEL

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