Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes

Ray Ming Lin*, Mu Jen Lai, Liann Be Chang, Chou Hsiung Huang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

11 Scopus citations

Abstract

External-quantum-efficiency (EQE) and efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes have been investigated. It was found that the insertion of an AlGaN barrier between the n-type GaN layer and the InGaN well resulted in higher peak EQE and reduced efficiency droop at a higher injection level. EQE was improved by 5.7% and 25.8% over that of a sample without an AlGaN barrier at a current density of 104.3 A/ cm2 and 521 A/ cm2, respectively. It is suggested that the mechanism is attributed to an electron decelerating effect that enlarges the effective active region.

Original languageEnglish
Article number181108
JournalApplied Physics Letters
Volume97
Issue number18
DOIs
StatePublished - 01 11 2010

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