Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

Nie Chuan Chen; Chien Yuan Tseng; Hsin Tung Lin

doi:10.1016/j.jcrysgro.2008.09.102

Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

Nie Chuan Chen^*, Chien Yuan Tseng, Hsin Tung Lin

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

The effects of surface state on sheet carrier density in the Al_0.17Ga_0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×10¹³ e/cm². However, this value was inconsistent with the capacitance-voltage (C-V) measurements. This carrier density varied with the surface conditions of the samples that were prepared for Hall and C-V measurements. To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined.

Original language	English
Pages (from-to)	859-862
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.102
State	Published - 15 01 2009

Keywords

A1. Surface structure
A3. Metal-organic chemical vapor deposition
B1. Sapphire
B2. Semiconducting III-V materials
B3. Heterojunction semiconductor devices
B3. High electron mobility transistors

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10.1016/j.jcrysgro.2008.09.102

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title = "Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure",

abstract = "The effects of surface state on sheet carrier density in the Al0.17Ga0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×1013 e/cm2. However, this value was inconsistent with the capacitance-voltage (C-V) measurements. This carrier density varied with the surface conditions of the samples that were prepared for Hall and C-V measurements. To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined.",

keywords = "A1. Surface structure, A3. Metal-organic chemical vapor deposition, B1. Sapphire, B2. Semiconducting III-V materials, B3. Heterojunction semiconductor devices, B3. High electron mobility transistors",

author = "Chen, {Nie Chuan} and Tseng, {Chien Yuan} and Lin, {Hsin Tung}",

year = "2009",

month = jan,

day = "15",

doi = "10.1016/j.jcrysgro.2008.09.102",

language = "英语",

volume = "311",

pages = "859--862",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

AU - Chen, Nie Chuan

AU - Tseng, Chien Yuan

AU - Lin, Hsin Tung

PY - 2009/1/15

Y1 - 2009/1/15

N2 - The effects of surface state on sheet carrier density in the Al0.17Ga0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×1013 e/cm2. However, this value was inconsistent with the capacitance-voltage (C-V) measurements. This carrier density varied with the surface conditions of the samples that were prepared for Hall and C-V measurements. To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined.

AB - The effects of surface state on sheet carrier density in the Al0.17Ga0.83N/GaN heterostructure were investigated. The sheet carrier density obtained by Hall measurement was 1.803×1013 e/cm2. However, this value was inconsistent with the capacitance-voltage (C-V) measurements. This carrier density varied with the surface conditions of the samples that were prepared for Hall and C-V measurements. To study further the effects of the surface conditions on the sheet carrier densities, the samples were annealed at various temperatures and then characterized by Hall and work function measurements. The carrier densities increased with annealing temperatures. Meanwhile, the work functions decreased. Accordingly, the relationship between the surface states and the sheet carrier densities was determined.

KW - A1. Surface structure

KW - A3. Metal-organic chemical vapor deposition

KW - B1. Sapphire

KW - B2. Semiconducting III-V materials

KW - B3. Heterojunction semiconductor devices

KW - B3. High electron mobility transistors

UR - http://www.scopus.com/inward/record.url?scp=59749105748&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.09.102

DO - 10.1016/j.jcrysgro.2008.09.102

M3 - 文章

AN - SCOPUS:59749105748

SN - 0022-0248

VL - 311

SP - 859

EP - 862

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure

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Keywords

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