Effect of annealing on the structural and optical properties of AgGaS2 thin films prepared by pulsed laser deposition

Hsu Cheng Hsu; Hsin Hong Chen; Shou Yi Kuo; Chen Shiung Chang; Wen Feng Hsieh

doi:10.1016/S0040-6090(02)00743-5

Effect of annealing on the structural and optical properties of AgGaS₂ thin films prepared by pulsed laser deposition

Hsu Cheng Hsu
, Hsin Hong Chen
, Shou Yi Kuo
, Chen Shiung Chang
, Wen Feng Hsieh^*

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

The influence of annealing on the AgGaS₂ films grown by pulsed laser deposition has been investigated. The X-ray diffraction results show the AgGaS₂ films were found with preferential orientation (1 1 2) normal to the surface and silver droplets were diminished after the post-annealing. Photoluminescence (PL) measurements reveled the exciton energy is slightly red shifted that is possibly due to the thermal strain effect. The binding energy of the shallow donors is ∼28 meV determined from temperature dependent PL spectra. In addition, the A-exciton and the B/C-exciton could be observed in the transmittance spectra at room temperature.

Original language	English
Pages (from-to)	237-241
Number of pages	5
Journal	Thin Solid Films
Volume	419
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)00743-5
State	Published - 01 11 2002
Externally published	Yes

Keywords

Optical properties
Photoluminescence
X-ray diffraction

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10.1016/S0040-6090(02)00743-5

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@article{ca38a247de714f51beae4965dccdb9e7,

title = "Effect of annealing on the structural and optical properties of AgGaS2 thin films prepared by pulsed laser deposition",

abstract = "The influence of annealing on the AgGaS2 films grown by pulsed laser deposition has been investigated. The X-ray diffraction results show the AgGaS2 films were found with preferential orientation (1 1 2) normal to the surface and silver droplets were diminished after the post-annealing. Photoluminescence (PL) measurements reveled the exciton energy is slightly red shifted that is possibly due to the thermal strain effect. The binding energy of the shallow donors is ∼28 meV determined from temperature dependent PL spectra. In addition, the A-exciton and the B/C-exciton could be observed in the transmittance spectra at room temperature.",

keywords = "Optical properties, Photoluminescence, X-ray diffraction",

author = "Hsu, \{Hsu Cheng\} and Chen, \{Hsin Hong\} and Kuo, \{Shou Yi\} and Chang, \{Chen Shiung\} and Hsieh, \{Wen Feng\}",

year = "2002",

month = nov,

day = "1",

doi = "10.1016/S0040-6090(02)00743-5",

language = "英语",

volume = "419",

pages = "237--241",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Effect of annealing on the structural and optical properties of AgGaS2 thin films prepared by pulsed laser deposition

AU - Hsu, Hsu Cheng

AU - Chen, Hsin Hong

AU - Kuo, Shou Yi

AU - Chang, Chen Shiung

AU - Hsieh, Wen Feng

PY - 2002/11/1

Y1 - 2002/11/1

N2 - The influence of annealing on the AgGaS2 films grown by pulsed laser deposition has been investigated. The X-ray diffraction results show the AgGaS2 films were found with preferential orientation (1 1 2) normal to the surface and silver droplets were diminished after the post-annealing. Photoluminescence (PL) measurements reveled the exciton energy is slightly red shifted that is possibly due to the thermal strain effect. The binding energy of the shallow donors is ∼28 meV determined from temperature dependent PL spectra. In addition, the A-exciton and the B/C-exciton could be observed in the transmittance spectra at room temperature.

AB - The influence of annealing on the AgGaS2 films grown by pulsed laser deposition has been investigated. The X-ray diffraction results show the AgGaS2 films were found with preferential orientation (1 1 2) normal to the surface and silver droplets were diminished after the post-annealing. Photoluminescence (PL) measurements reveled the exciton energy is slightly red shifted that is possibly due to the thermal strain effect. The binding energy of the shallow donors is ∼28 meV determined from temperature dependent PL spectra. In addition, the A-exciton and the B/C-exciton could be observed in the transmittance spectra at room temperature.

KW - Optical properties

KW - Photoluminescence

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/0036850897

U2 - 10.1016/S0040-6090(02)00743-5

DO - 10.1016/S0040-6090(02)00743-5

M3 - 文章

AN - SCOPUS:0036850897

SN - 0040-6090

VL - 419

SP - 237

EP - 241

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Effect of annealing on the structural and optical properties of AgGaS₂ thin films prepared by pulsed laser deposition

Abstract

Keywords

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