Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

Chia Liang Sun; San Yuan Chen; Shi Bai Chen; Albert Chin

doi:10.1063/1.1459115

Effect of annealing temperature on physical and electrical properties of Bi_3.25La_0.75Ti₃O₁₂ thin films on Al₂O₃-buffered Si

Chia Liang Sun^*
, San Yuan Chen
, Shi Bai Chen
, Albert Chin

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

44 Scopus citations

Abstract

The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi_3.25La _0.75Ti₃O₁₂ (BLT) thin films on Al ₂O₃ (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al₂O₃/Si capacitors annealed at temperature range of 700°C-950°C increases with increasing annealing temperature. At the highest annealing temperature of 950°C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al₂O₃/Si capacitor is compatible with current very large scale integrated technology process.

Original language	English
Pages (from-to)	1984-1986
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	11
DOIs	https://doi.org/10.1063/1.1459115
State	Published - 18 03 2002
Externally published	Yes

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title = "Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si",

abstract = "The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La 0.75Ti3O12 (BLT) thin films on Al 2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700°C-950°C increases with increasing annealing temperature. At the highest annealing temperature of 950°C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.",

author = "Sun, \{Chia Liang\} and Chen, \{San Yuan\} and Chen, \{Shi Bai\} and Albert Chin",

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T1 - Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

AU - Sun, Chia Liang

AU - Chen, San Yuan

AU - Chen, Shi Bai

AU - Chin, Albert

PY - 2002/3/18

Y1 - 2002/3/18

N2 - The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La 0.75Ti3O12 (BLT) thin films on Al 2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700°C-950°C increases with increasing annealing temperature. At the highest annealing temperature of 950°C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.

AB - The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La 0.75Ti3O12 (BLT) thin films on Al 2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700°C-950°C increases with increasing annealing temperature. At the highest annealing temperature of 950°C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.

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U2 - 10.1063/1.1459115

DO - 10.1063/1.1459115

M3 - 文章

AN - SCOPUS:79956032487

SN - 0003-6951

VL - 80

SP - 1984

EP - 1986

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Effect of annealing temperature on physical and electrical properties of Bi_3.25La_0.75Ti₃O₁₂ thin films on Al₂O₃-buffered Si

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