Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures

Tzer En Nee; Ya Fen Wu; Ray Ming Lin

doi:10.1116/1.1924585

Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures

Tzer En Nee^*
, Ya Fen Wu
, Ray Ming Lin

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

A steady-state thermal model for carrier dynamics in self-organized InAsGaAs quantum dot heterostructure is presented. The effect of quantum-dot size distribution, density of states random population, thermal emission, retrapping, and relaxation are investigated. The temperature-dependent photoluminescence spectra obtained from two samples with different dot densities and size uniformities are simulated in this model and show a good agreement with experiment. The corresponding mechanisms of carrier dynamics related to the thermal redistribution and lateral transition of excited carriers as well as the observed phenomena resulting from these mechanisms, are discussed in detail.

Original language	English
Pages (from-to)	954-958
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1924585
State	Published - 2005

Access to Document

10.1116/1.1924585

Cite this

@article{6f749b9d4e3340cfa57e10c6aad442f8,

title = "Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures",

abstract = "A steady-state thermal model for carrier dynamics in self-organized InAsGaAs quantum dot heterostructure is presented. The effect of quantum-dot size distribution, density of states random population, thermal emission, retrapping, and relaxation are investigated. The temperature-dependent photoluminescence spectra obtained from two samples with different dot densities and size uniformities are simulated in this model and show a good agreement with experiment. The corresponding mechanisms of carrier dynamics related to the thermal redistribution and lateral transition of excited carriers as well as the observed phenomena resulting from these mechanisms, are discussed in detail.",

author = "Nee, \{Tzer En\} and Wu, \{Ya Fen\} and Lin, \{Ray Ming\}",

year = "2005",

doi = "10.1116/1.1924585",

language = "英语",

volume = "23",

pages = "954--958",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures

AU - Nee, Tzer En

AU - Wu, Ya Fen

AU - Lin, Ray Ming

PY - 2005

Y1 - 2005

N2 - A steady-state thermal model for carrier dynamics in self-organized InAsGaAs quantum dot heterostructure is presented. The effect of quantum-dot size distribution, density of states random population, thermal emission, retrapping, and relaxation are investigated. The temperature-dependent photoluminescence spectra obtained from two samples with different dot densities and size uniformities are simulated in this model and show a good agreement with experiment. The corresponding mechanisms of carrier dynamics related to the thermal redistribution and lateral transition of excited carriers as well as the observed phenomena resulting from these mechanisms, are discussed in detail.

AB - A steady-state thermal model for carrier dynamics in self-organized InAsGaAs quantum dot heterostructure is presented. The effect of quantum-dot size distribution, density of states random population, thermal emission, retrapping, and relaxation are investigated. The temperature-dependent photoluminescence spectra obtained from two samples with different dot densities and size uniformities are simulated in this model and show a good agreement with experiment. The corresponding mechanisms of carrier dynamics related to the thermal redistribution and lateral transition of excited carriers as well as the observed phenomena resulting from these mechanisms, are discussed in detail.

UR - https://www.scopus.com/pages/publications/31144476017

U2 - 10.1116/1.1924585

DO - 10.1116/1.1924585

M3 - 文章

AN - SCOPUS:31144476017

SN - 1071-1023

VL - 23

SP - 954

EP - 958

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this