Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes

Liann Be Chang; Mu Jen Lai; Ray Ming Lin; Chou Hsiung Huang

doi:10.1143/APEX.4.012106

Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes

Liann Be Chang^*, Mu Jen Lai, Ray Ming Lin, Chou Hsiung Huang

^*Corresponding author for this work

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

32 Scopus citations

Abstract

Efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes (LEDs) has been investigated by inserting an extra InGaN quantum well into the p-type side as the electron leakage test structure. The LED with a test structure exhibits an improvement of efficiency droop in the measurement range of 83.4 to 521 A/cm². These results suggest that the electron leakage significantly decreases the peak external quantum efficiency and shifts the start point of efficiency drop to a higher current density. Additionally, the hole injection efficiency probably dominates the mechanism of efficiency droop rather than electron leakage in the wide-well InGaN DH LEDs.

Original language	English
Article number	012106
Journal	Applied Physics Express
Volume	4
Issue number	1
DOIs	https://doi.org/10.1143/APEX.4.012106
State	Published - 01 2011

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title = "Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes",

abstract = "Efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes (LEDs) has been investigated by inserting an extra InGaN quantum well into the p-type side as the electron leakage test structure. The LED with a test structure exhibits an improvement of efficiency droop in the measurement range of 83.4 to 521 A/cm2. These results suggest that the electron leakage significantly decreases the peak external quantum efficiency and shifts the start point of efficiency drop to a higher current density. Additionally, the hole injection efficiency probably dominates the mechanism of efficiency droop rather than electron leakage in the wide-well InGaN DH LEDs.",

author = "Chang, {Liann Be} and Lai, {Mu Jen} and Lin, {Ray Ming} and Huang, {Chou Hsiung}",

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doi = "10.1143/APEX.4.012106",

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AU - Chang, Liann Be

AU - Lai, Mu Jen

AU - Lin, Ray Ming

AU - Huang, Chou Hsiung

PY - 2011/1

Y1 - 2011/1

N2 - Efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes (LEDs) has been investigated by inserting an extra InGaN quantum well into the p-type side as the electron leakage test structure. The LED with a test structure exhibits an improvement of efficiency droop in the measurement range of 83.4 to 521 A/cm2. These results suggest that the electron leakage significantly decreases the peak external quantum efficiency and shifts the start point of efficiency drop to a higher current density. Additionally, the hole injection efficiency probably dominates the mechanism of efficiency droop rather than electron leakage in the wide-well InGaN DH LEDs.

AB - Efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes (LEDs) has been investigated by inserting an extra InGaN quantum well into the p-type side as the electron leakage test structure. The LED with a test structure exhibits an improvement of efficiency droop in the measurement range of 83.4 to 521 A/cm2. These results suggest that the electron leakage significantly decreases the peak external quantum efficiency and shifts the start point of efficiency drop to a higher current density. Additionally, the hole injection efficiency probably dominates the mechanism of efficiency droop rather than electron leakage in the wide-well InGaN DH LEDs.

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JO - Applied Physics Express

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Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes

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