Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5 Gate Dielectric

Tung Ming Pan; Bo Jung Peng; Jim Long Her; Bih Show Lou

doi:10.1109/TED.2017.2680410

Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb₂TiO₅ Gate Dielectric

Tung Ming Pan^*, Bo Jung Peng, Jim Long Her, Bih Show Lou

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb₂TiO₅ gate dielectric. The Yb₂TiO₅ α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high I_ONI_OFF ratio of 1.1× 10⁸, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm²/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.

Original language	English
Article number	7886364
Pages (from-to)	2233-2238
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	5
DOIs	https://doi.org/10.1109/TED.2017.2680410
State	Published - 05 2017

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Amorphous indium-zin-tin oxide (α-InZnSnO)
YbTiO
thin-film transistor (TFT)

Access to Document

10.1109/TED.2017.2680410

Cite this

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title = "Effect of in and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5 Gate Dielectric",

abstract = "In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb2TiO5 gate dielectric. The Yb2TiO5 α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high IONIOFF ratio of 1.1× 108, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm2/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.",

keywords = "Amorphous indium-zin-tin oxide (α-InZnSnO), YbTiO, thin-film transistor (TFT)",

author = "Pan, {Tung Ming} and Peng, {Bo Jung} and Her, {Jim Long} and Lou, {Bih Show}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2017",

month = may,

doi = "10.1109/TED.2017.2680410",

language = "英语",

volume = "64",

pages = "2233--2238",

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AU - Pan, Tung Ming

AU - Peng, Bo Jung

AU - Her, Jim Long

AU - Lou, Bih Show

PY - 2017/5

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AB - In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium-zinc-tin oxide (α-InZnSnO) thin-film transistors (TFTs) featuring an Yb2TiO5 gate dielectric. The Yb2TiO5 α-InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high IONIOFF ratio of 1.1× 108, a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm2/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.

KW - Amorphous indium-zin-tin oxide (α-InZnSnO)

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