Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices

Chia Wen Zhong; Wen Hsien Tzeng; Kou Chen Liu; Horng Chih Lin; Kow Ming Chang; Yi Chun Chan; Chun Chih Kuo; Pang Shiu Chen; Heng Yuan Lee; Frederick Chen; Ming Jinn Tsai

doi:10.1016/j.surfcoat.2012.07.039

Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO_x RRAM devices

Chia Wen Zhong, Wen Hsien Tzeng, Kou Chen Liu^*, Horng Chih Lin, Kow Ming Chang, Yi Chun Chan, Chun Chih Kuo, Pang Shiu Chen, Heng Yuan Lee, Frederick Chen, Ming Jinn Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

35 Scopus citations

Abstract

In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfO_x/TiN capacitor structure is investigated. Switching parameters, including set and reset voltage values, and high and low resistance values are highly related to the properties of ITO thin films. Higher resistance values in both states can be obtained when ITO thin films with higher oxygen contents are used as top electrodes; such values are accompanied by larger set voltages and fluctuating transient currents during the reset process. Based on the proposed filament model, we suggest that the switching mechanism of HfO_x/TiN structure is attributed to the formation and rupture of conducting filamentary paths near the anodic side, which is highly correlated with the properties of the top electrode. The top electrode must be well determined to obtain reliable switching properties.

Original language	English
Pages (from-to)	563-566
Number of pages	4
Journal	Surface and Coatings Technology
Volume	231
DOIs	https://doi.org/10.1016/j.surfcoat.2012.07.039
State	Published - 25 09 2013

Keywords

Indium tin oxide (ITO)
Oxygen content
Transparent-RRAM (TRRAM)

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10.1016/j.surfcoat.2012.07.039

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title = "Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices",

abstract = "In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfOx/TiN capacitor structure is investigated. Switching parameters, including set and reset voltage values, and high and low resistance values are highly related to the properties of ITO thin films. Higher resistance values in both states can be obtained when ITO thin films with higher oxygen contents are used as top electrodes; such values are accompanied by larger set voltages and fluctuating transient currents during the reset process. Based on the proposed filament model, we suggest that the switching mechanism of HfOx/TiN structure is attributed to the formation and rupture of conducting filamentary paths near the anodic side, which is highly correlated with the properties of the top electrode. The top electrode must be well determined to obtain reliable switching properties.",

keywords = "Indium tin oxide (ITO), Oxygen content, Transparent-RRAM (TRRAM)",

author = "Zhong, {Chia Wen} and Tzeng, {Wen Hsien} and Liu, {Kou Chen} and Lin, {Horng Chih} and Chang, {Kow Ming} and Chan, {Yi Chun} and Kuo, {Chun Chih} and Chen, {Pang Shiu} and Lee, {Heng Yuan} and Frederick Chen and Tsai, {Ming Jinn}",

year = "2013",

month = sep,

day = "25",

doi = "10.1016/j.surfcoat.2012.07.039",

language = "英语",

volume = "231",

pages = "563--566",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices

AU - Zhong, Chia Wen

AU - Tzeng, Wen Hsien

AU - Liu, Kou Chen

AU - Lin, Horng Chih

AU - Chang, Kow Ming

AU - Chan, Yi Chun

AU - Kuo, Chun Chih

AU - Chen, Pang Shiu

AU - Lee, Heng Yuan

AU - Chen, Frederick

AU - Tsai, Ming Jinn

PY - 2013/9/25

Y1 - 2013/9/25

N2 - In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfOx/TiN capacitor structure is investigated. Switching parameters, including set and reset voltage values, and high and low resistance values are highly related to the properties of ITO thin films. Higher resistance values in both states can be obtained when ITO thin films with higher oxygen contents are used as top electrodes; such values are accompanied by larger set voltages and fluctuating transient currents during the reset process. Based on the proposed filament model, we suggest that the switching mechanism of HfOx/TiN structure is attributed to the formation and rupture of conducting filamentary paths near the anodic side, which is highly correlated with the properties of the top electrode. The top electrode must be well determined to obtain reliable switching properties.

AB - In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfOx/TiN capacitor structure is investigated. Switching parameters, including set and reset voltage values, and high and low resistance values are highly related to the properties of ITO thin films. Higher resistance values in both states can be obtained when ITO thin films with higher oxygen contents are used as top electrodes; such values are accompanied by larger set voltages and fluctuating transient currents during the reset process. Based on the proposed filament model, we suggest that the switching mechanism of HfOx/TiN structure is attributed to the formation and rupture of conducting filamentary paths near the anodic side, which is highly correlated with the properties of the top electrode. The top electrode must be well determined to obtain reliable switching properties.

KW - Indium tin oxide (ITO)

KW - Oxygen content

KW - Transparent-RRAM (TRRAM)

UR - http://www.scopus.com/inward/record.url?scp=84882758137&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2012.07.039

DO - 10.1016/j.surfcoat.2012.07.039

M3 - 文章

AN - SCOPUS:84882758137

SN - 0257-8972

VL - 231

SP - 563

EP - 566

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO_x RRAM devices

Abstract

Keywords

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