Effect of nano-grain on the memory characteristics of high-k HfAlO charge trapping layers for nano-scale nonvolatile memory device applications

T. Y. Wang, Siddheswar Maikap, P. J. Tzeng, D. Panda, L. S. Lee, M. J. Tsai, J. R. Yang

Research output: Contribution to conferenceProceeding

Original languageAmerican English
StatePublished - 2007
Event2007 International conference on Solid State Devices and Materials (SSDM 2007) - Ibaraki, Japan
Duration: 18 09 200721 09 2007

Conference

Conference2007 International conference on Solid State Devices and Materials (SSDM 2007)
Period18/09/0721/09/07

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