Effect of nano-grain on the memory characteristics of high-k HfAlO charge trapping layers for nano-scale nonvolatile memory device applications

T. Y. Wang; Siddheswar Maikap; P. J. Tzeng; D. Panda; L. S. Lee; M. J. Tsai; J. R. Yang

Effect of nano-grain on the memory characteristics of high-k HfAlO charge trapping layers for nano-scale nonvolatile memory device applications

T. Y. Wang, Siddheswar Maikap, P. J. Tzeng, D. Panda, L. S. Lee, M. J. Tsai, J. R. Yang

Department of Electronic Engineering

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2007
Event	2007 International conference on Solid State Devices and Materials (SSDM 2007) - Ibaraki, Japan Duration: 18 09 2007 → 21 09 2007

Conference

Conference	2007 International conference on Solid State Devices and Materials (SSDM 2007)
Period	18/09/07 → 21/09/07

Cite this

@conference{2bb7c8c3f3f44e93805e87d5b1d3ed7f,

title = "Effect of nano-grain on the memory characteristics of high-k HfAlO charge trapping layers for nano-scale nonvolatile memory device applications",

author = "Wang, \{T. Y.\} and Siddheswar Maikap and Tzeng, \{P. J.\} and D. Panda and Lee, \{L. S.\} and Tsai, \{M. J.\} and Yang, \{J. R.\}",

year = "2007",

language = "American English",

note = "2007 International conference on Solid State Devices and Materials (SSDM 2007) ; Conference date: 18-09-2007 Through 21-09-2007",

}

TY - CONF

T1 - Effect of nano-grain on the memory characteristics of high-k HfAlO charge trapping layers for nano-scale nonvolatile memory device applications

AU - Wang, T. Y.

AU - Maikap, Siddheswar

AU - Tzeng, P. J.

AU - Panda, D.

AU - Lee, L. S.

AU - Tsai, M. J.

AU - Yang, J. R.

PY - 2007

Y1 - 2007

M3 - Proceeding

T2 - 2007 International conference on Solid State Devices and Materials (SSDM 2007)

Y2 - 18 September 2007 through 21 September 2007

ER -