Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation

Kuo Lang Yeh; Ming Jer Jeng; Jenn Gwo Hwu

Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation

Kuo Lang Yeh^*
, Ming Jer Jeng
, Jenn Gwo Hwu

^*Corresponding author for this work

National Taiwan University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Room temperature liquid phase deposition (LPD) followed by rapid thermal oxidation (RTO) was used to prepare thin fluorinated oxides (LPD/RTO). Both atmosphere (760 torr) and low pressure (600 torr) rapid thermal oxidation, i.e., ARTO and LRTO, respectively, were examined. It was found that the best LPD/ARTO oxide exhibited enhanced charge-to breakdown Q_BD but degraded oxide breakdown field E_BD. However, when the oxidation pressure was reduced, the best LPD/LRTO oxide exhibited improved characteristics in both Q_BD and E_BD. It is supposed that the fixed oxide charge distribution in thin oxides plays an important role in characterizing the time-zero dielectric breakdown (TZDB) behavior. Furthermore, both the LPD time and the following RTO pressure and time can be used to control the fluorine content or the charge distribution in LPD/RTO oxides.

Original language	English
Pages (from-to)	539-545
Number of pages	7
Journal	Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
Volume	22
Issue number	4
State	Published - 07 1998
Externally published	Yes

Cite this

@article{eb941c90356c43769d4de50f48222a51,

title = "Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation",

abstract = "Room temperature liquid phase deposition (LPD) followed by rapid thermal oxidation (RTO) was used to prepare thin fluorinated oxides (LPD/RTO). Both atmosphere (760 torr) and low pressure (600 torr) rapid thermal oxidation, i.e., ARTO and LRTO, respectively, were examined. It was found that the best LPD/ARTO oxide exhibited enhanced charge-to breakdown QBD but degraded oxide breakdown field EBD. However, when the oxidation pressure was reduced, the best LPD/LRTO oxide exhibited improved characteristics in both QBD and EBD. It is supposed that the fixed oxide charge distribution in thin oxides plays an important role in characterizing the time-zero dielectric breakdown (TZDB) behavior. Furthermore, both the LPD time and the following RTO pressure and time can be used to control the fluorine content or the charge distribution in LPD/RTO oxides.",

keywords = "室溫液相沉積法, 快速熱氧化處理, 氟, 氧化層",

author = "Yeh, \{Kuo Lang\} and Jeng, \{Ming Jer\} and Hwu, \{Jenn Gwo\}",

year = "1998",

month = jul,

language = "英语",

volume = "22",

pages = "539--545",

journal = "Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering",

issn = "0255-6588",

publisher = "National Science Council",

number = "4",

}

Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation. / Yeh, Kuo Lang; Jeng, Ming Jer; Hwu, Jenn Gwo.
In: Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering, Vol. 22, No. 4, 07.1998, p. 539-545.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation

AU - Yeh, Kuo Lang

AU - Jeng, Ming Jer

AU - Hwu, Jenn Gwo

PY - 1998/7

Y1 - 1998/7

N2 - Room temperature liquid phase deposition (LPD) followed by rapid thermal oxidation (RTO) was used to prepare thin fluorinated oxides (LPD/RTO). Both atmosphere (760 torr) and low pressure (600 torr) rapid thermal oxidation, i.e., ARTO and LRTO, respectively, were examined. It was found that the best LPD/ARTO oxide exhibited enhanced charge-to breakdown QBD but degraded oxide breakdown field EBD. However, when the oxidation pressure was reduced, the best LPD/LRTO oxide exhibited improved characteristics in both QBD and EBD. It is supposed that the fixed oxide charge distribution in thin oxides plays an important role in characterizing the time-zero dielectric breakdown (TZDB) behavior. Furthermore, both the LPD time and the following RTO pressure and time can be used to control the fluorine content or the charge distribution in LPD/RTO oxides.

AB - Room temperature liquid phase deposition (LPD) followed by rapid thermal oxidation (RTO) was used to prepare thin fluorinated oxides (LPD/RTO). Both atmosphere (760 torr) and low pressure (600 torr) rapid thermal oxidation, i.e., ARTO and LRTO, respectively, were examined. It was found that the best LPD/ARTO oxide exhibited enhanced charge-to breakdown QBD but degraded oxide breakdown field EBD. However, when the oxidation pressure was reduced, the best LPD/LRTO oxide exhibited improved characteristics in both QBD and EBD. It is supposed that the fixed oxide charge distribution in thin oxides plays an important role in characterizing the time-zero dielectric breakdown (TZDB) behavior. Furthermore, both the LPD time and the following RTO pressure and time can be used to control the fluorine content or the charge distribution in LPD/RTO oxides.

KW - 室溫液相沉積法

KW - 快速熱氧化處理

KW - 氟

KW - 氧化層

UR - https://www.scopus.com/pages/publications/0032115466

M3 - 文章

AN - SCOPUS:0032115466

SN - 0255-6588

VL - 22

SP - 539

EP - 545

JO - Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering

JF - Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering

IS - 4

ER -

Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation

Abstract

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