Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED

Chun Wei Liao; Yung Hsiang Lin; Cheng Ying Yen; Pei Wen Liu; Yuan Chieh Lu; Ray Ming Lin

doi:10.1109/ISDRS.2007.4422389

Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED

Chun Wei Liao^*, Yung Hsiang Lin, Cheng Ying Yen, Pei Wen Liu, Yuan Chieh Lu, Ray Ming Lin

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422389
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 12 2007 → 14 12 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

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10.1109/ISDRS.2007.4422389

Cite this

@inproceedings{85901f9bc2514617850b4d58dd66e324,

title = "Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED",

author = "Liao, {Chun Wei} and Lin, {Yung Hsiang} and Yen, {Cheng Ying} and Liu, {Pei Wen} and Lu, {Yuan Chieh} and Lin, {Ray Ming}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422389",

language = "英语",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Liao, CW, Lin, YH, Yen, CY, Liu, PW, Lu, YC & Lin, RM 2007, Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422389, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422389

Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED. / Liao, Chun Wei; Lin, Yung Hsiang; Yen, Cheng Ying et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422389 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED

AU - Liao, Chun Wei

AU - Lin, Yung Hsiang

AU - Yen, Cheng Ying

AU - Liu, Pei Wen

AU - Lu, Yuan Chieh

AU - Lin, Ray Ming

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949139726&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422389

DO - 10.1109/ISDRS.2007.4422389

M3 - 会议稿件

AN - SCOPUS:44949139726

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Effect of p-type cladding layer and p++-GaN layer of InGaN/GaN MQWs blue LED

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Conference

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