Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO                         3                          gate dielectrics

Tung Ming Pan; Li Chen Yen; Sheng Han Su

doi:10.1016/j.apsusc.2009.09.017

Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO ₃ gate dielectrics

Tung Ming Pan^*
, Li Chen Yen
, Sheng Han Su

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

In this article, the authors developed a high-k HoTiO ₃ gate dielectric deposited on Si (1 0 0) through reactive cosputtering. They found that the HoTiO ₃ dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect (related to oxygen vacancy) due to a rather well-crystallized HoTiO ₃ structure and composition observed by X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, respectively.

Original language	English
Pages (from-to)	1534-1537
Number of pages	4
Journal	Applied Surface Science
Volume	256
Issue number	5
DOIs	https://doi.org/10.1016/j.apsusc.2009.09.017
State	Published - 15 12 2009

Keywords

Gate dielectric
High-k
HoTiO

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10.1016/j.apsusc.2009.09.017

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title = " Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO 3 gate dielectrics ",

abstract = " In this article, the authors developed a high-k HoTiO 3 gate dielectric deposited on Si (1 0 0) through reactive cosputtering. They found that the HoTiO 3 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect (related to oxygen vacancy) due to a rather well-crystallized HoTiO 3 structure and composition observed by X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, respectively.",

keywords = "Gate dielectric, High-k, HoTiO",

author = "Pan, \{Tung Ming\} and Yen, \{Li Chen\} and Su, \{Sheng Han\}",

year = "2009",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2009.09.017",

language = "英语",

volume = "256",

pages = "1534--1537",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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}

Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO ₃ gate dielectrics . / Pan, Tung Ming; Yen, Li Chen; Su, Sheng Han.
In: Applied Surface Science, Vol. 256, No. 5, 15.12.2009, p. 1534-1537.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO 3 gate dielectrics

AU - Pan, Tung Ming

AU - Yen, Li Chen

AU - Su, Sheng Han

PY - 2009/12/15

Y1 - 2009/12/15

N2 - In this article, the authors developed a high-k HoTiO 3 gate dielectric deposited on Si (1 0 0) through reactive cosputtering. They found that the HoTiO 3 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect (related to oxygen vacancy) due to a rather well-crystallized HoTiO 3 structure and composition observed by X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, respectively.

AB - In this article, the authors developed a high-k HoTiO 3 gate dielectric deposited on Si (1 0 0) through reactive cosputtering. They found that the HoTiO 3 dielectrics annealed at 800 °C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect (related to oxygen vacancy) due to a rather well-crystallized HoTiO 3 structure and composition observed by X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, respectively.

KW - Gate dielectric

KW - High-k

KW - HoTiO

UR - https://www.scopus.com/pages/publications/71049182251

U2 - 10.1016/j.apsusc.2009.09.017

DO - 10.1016/j.apsusc.2009.09.017

M3 - 文章

AN - SCOPUS:71049182251

SN - 0169-4332

VL - 256

SP - 1534

EP - 1537

JO - Applied Surface Science

JF - Applied Surface Science

IS - 5

ER -

Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO ₃ gate dielectrics

Abstract

Keywords

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