Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

S. K. Samanta; S. Maikap; L. K. Bera; H. D. Banerjee; C. K. Maiti

doi:10.1088/0268-1242/16/8/312

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si_0.82Ge_0.18 layers

S. K. Samanta, S. Maikap, L. K. Bera, H. D. Banerjee, C. K. Maiti^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

Silicon dioxide and oxynitride films have been deposited on strained-Si_0.82Ge_0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TEOS/O₂ and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (at 700°C) on the electrical properties of the dielectrics have been studied. The border trap (Q_bt) generation has been characterized using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. It has been observed that the interface trap charge density (D_it) and gate voltage shift (Δ V_G) decrease with POA time. Under Fowler-Nordheim constant current stressing, the charge trapping behaviour and the amount of border trap charge density are found to be low in the case of TEOS/NO-plasma-deposited oxynitride films compared with TEOS- and TEOS/O₂-plasma-deposited oxide films.

Original language	English
Pages (from-to)	704-707
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	16
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/16/8/312
State	Published - 08 2001
Externally published	Yes

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title = "Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers",

abstract = "Silicon dioxide and oxynitride films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TEOS/O2 and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (at 700°C) on the electrical properties of the dielectrics have been studied. The border trap (Qbt) generation has been characterized using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. It has been observed that the interface trap charge density (Dit) and gate voltage shift (Δ VG) decrease with POA time. Under Fowler-Nordheim constant current stressing, the charge trapping behaviour and the amount of border trap charge density are found to be low in the case of TEOS/NO-plasma-deposited oxynitride films compared with TEOS- and TEOS/O2-plasma-deposited oxide films.",

author = "Samanta, {S. K.} and S. Maikap and Bera, {L. K.} and Banerjee, {H. D.} and Maiti, {C. K.}",

year = "2001",

month = aug,

doi = "10.1088/0268-1242/16/8/312",

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volume = "16",

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T1 - Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

AU - Samanta, S. K.

AU - Maikap, S.

AU - Bera, L. K.

AU - Banerjee, H. D.

AU - Maiti, C. K.

PY - 2001/8

Y1 - 2001/8

N2 - Silicon dioxide and oxynitride films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TEOS/O2 and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (at 700°C) on the electrical properties of the dielectrics have been studied. The border trap (Qbt) generation has been characterized using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. It has been observed that the interface trap charge density (Dit) and gate voltage shift (Δ VG) decrease with POA time. Under Fowler-Nordheim constant current stressing, the charge trapping behaviour and the amount of border trap charge density are found to be low in the case of TEOS/NO-plasma-deposited oxynitride films compared with TEOS- and TEOS/O2-plasma-deposited oxide films.

AB - Silicon dioxide and oxynitride films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TEOS/O2 and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (at 700°C) on the electrical properties of the dielectrics have been studied. The border trap (Qbt) generation has been characterized using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. It has been observed that the interface trap charge density (Dit) and gate voltage shift (Δ VG) decrease with POA time. Under Fowler-Nordheim constant current stressing, the charge trapping behaviour and the amount of border trap charge density are found to be low in the case of TEOS/NO-plasma-deposited oxynitride films compared with TEOS- and TEOS/O2-plasma-deposited oxide films.

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DO - 10.1088/0268-1242/16/8/312

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SN - 0268-1242

VL - 16

SP - 704

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si_0.82Ge_0.18 layers

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