Effect of sensing film thickness on sensing characteristics of dual-gate poly-si ion-sensitive field-effect-transistors

Li Chen Yen; Ming Tsyr Tang; Chia Ying Tan; Tung Ming Pan; Tien Sheng Chao

doi:10.1109/LED.2014.2365478

Effect of sensing film thickness on sensing characteristics of dual-gate poly-si ion-sensitive field-effect-transistors

Li Chen Yen^*, Ming Tsyr Tang, Chia Ying Tan, Tung Ming Pan, Tien Sheng Chao

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

We investigate the effect of sensing film thickness on the sensing characteristics of dual-gate (DG) poly-Si ion-sensitive field-effect transistors (ISFETs). The pH sensitivity (from 37.57 to 9.32 mV/pH) of the DG poly-Si ISFET device degrades with the increase in the sensing film thickness (from 20 to 120 nm), whereas hysteresis voltage (from 6.7 to 1.12 mV for a neutral to acid to alkaline to neural loop) and drift rate (from 13.47 to <3 mV/h at pH 7) improve accordingly. An improved hysteresis and drift phenomena are attributed to the reduction in top-gate capacitance of the sensing membrane, causing a smaller capacitive-coupling ratio (top-gate capacitance of sensing membrane to bottom-gate capacitance of tetraethylorthosilicate oxide).

Original language	English
Article number	6954697
Pages (from-to)	1302-1304
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/LED.2014.2365478
State	Published - 01 12 2014
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Drift, dual-gate (DG)
hysteresis
ion-sensitive field-effect transistor (ISFET)
poly-Si
sensitivity

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title = "Effect of sensing film thickness on sensing characteristics of dual-gate poly-si ion-sensitive field-effect-transistors",

abstract = "We investigate the effect of sensing film thickness on the sensing characteristics of dual-gate (DG) poly-Si ion-sensitive field-effect transistors (ISFETs). The pH sensitivity (from 37.57 to 9.32 mV/pH) of the DG poly-Si ISFET device degrades with the increase in the sensing film thickness (from 20 to 120 nm), whereas hysteresis voltage (from 6.7 to 1.12 mV for a neutral to acid to alkaline to neural loop) and drift rate (from 13.47 to <3 mV/h at pH 7) improve accordingly. An improved hysteresis and drift phenomena are attributed to the reduction in top-gate capacitance of the sensing membrane, causing a smaller capacitive-coupling ratio (top-gate capacitance of sensing membrane to bottom-gate capacitance of tetraethylorthosilicate oxide).",

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author = "Yen, {Li Chen} and Tang, {Ming Tsyr} and Tan, {Chia Ying} and Pan, {Tung Ming} and Chao, {Tien Sheng}",

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AU - Yen, Li Chen

AU - Tang, Ming Tsyr

AU - Tan, Chia Ying

AU - Pan, Tung Ming

AU - Chao, Tien Sheng

PY - 2014/12/1

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N2 - We investigate the effect of sensing film thickness on the sensing characteristics of dual-gate (DG) poly-Si ion-sensitive field-effect transistors (ISFETs). The pH sensitivity (from 37.57 to 9.32 mV/pH) of the DG poly-Si ISFET device degrades with the increase in the sensing film thickness (from 20 to 120 nm), whereas hysteresis voltage (from 6.7 to 1.12 mV for a neutral to acid to alkaline to neural loop) and drift rate (from 13.47 to <3 mV/h at pH 7) improve accordingly. An improved hysteresis and drift phenomena are attributed to the reduction in top-gate capacitance of the sensing membrane, causing a smaller capacitive-coupling ratio (top-gate capacitance of sensing membrane to bottom-gate capacitance of tetraethylorthosilicate oxide).

AB - We investigate the effect of sensing film thickness on the sensing characteristics of dual-gate (DG) poly-Si ion-sensitive field-effect transistors (ISFETs). The pH sensitivity (from 37.57 to 9.32 mV/pH) of the DG poly-Si ISFET device degrades with the increase in the sensing film thickness (from 20 to 120 nm), whereas hysteresis voltage (from 6.7 to 1.12 mV for a neutral to acid to alkaline to neural loop) and drift rate (from 13.47 to <3 mV/h at pH 7) improve accordingly. An improved hysteresis and drift phenomena are attributed to the reduction in top-gate capacitance of the sensing membrane, causing a smaller capacitive-coupling ratio (top-gate capacitance of sensing membrane to bottom-gate capacitance of tetraethylorthosilicate oxide).

KW - Drift, dual-gate (DG)

KW - hysteresis

KW - ion-sensitive field-effect transistor (ISFET)

KW - poly-Si

KW - sensitivity

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Effect of sensing film thickness on sensing characteristics of dual-gate poly-si ion-sensitive field-effect-transistors

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