Effect of Sn content in a CuSnZn metal precursor on formation of MoSe2 film during selenization in Se+SnSe vapor

Liyong Yao, Jianping Ao*, Ming Jer Jeng, Jinlian Bi, Shoushuai Gao, Guozhong Sun, Qing He, Zhiqiang Zhou, Yun Sun, Liann Be Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

10 Scopus citations

Abstract

The preparation of Cu2ZnSnSe4 (CZTSe) thin films by the selenization of an electrodeposited copper-tin-zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSex vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSex vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films. A metal precursor with a very Sn-poor composition produces CZTSe films with large grains and a rough surface, while a metal precursor with a very Sn-rich composition procures CZTSe films with small grains and a compact surface. X-ray diffraction (XRD) and SEM revealed that the metal precursor with a Sn-rich composition can grow a thicker MoSe2 thin film at CZTSe/Mo interface than one with a Sn-poor composition, possibly because excess Sn in the precursor may catalyze the formation of MoSe2 thin film. A CZTSe solar cell with an efficiency of 7.94%was realized by using an electrodeposited metal precursor with a Sn/Cu ratio of 0.5 in selenization in a low-pressure Se+SnSex vapor.

Original languageEnglish
Article number241
JournalMaterials
Volume9
Issue number4
DOIs
StatePublished - 2016

Bibliographical note

Publisher Copyright:
© 2016 by the authors.

Keywords

  • CuZnSnSe solar cells
  • Electrodeposited CuSnZn precursor
  • MoSe
  • Se+SnSe vapor
  • Selenization

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