Abstract
We investigated the effect of surface roughness on the electrical characteristics in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) fabricating high-κ Sm2O3 gate dielectrics, prepared under different annealing temperatures. The high-κ Sm2O3 a-IGZO TFT device annealed at 200 °C exhibited better electrical characteristics, including a large field effect mobility of 6.25 cm2/V s, small threshold voltage of 0.79 V, low subthreshold swing of 354 mV/decade, and high Ion/Ioff ratio of 3.1×107. These results are attributed to the formation of smooth surface at the oxide/channel interface. Furthermore, the reliability of a Sm2O3 a-IGZO TFT device can be improved by oxygen annealing at low temperature.
Original language | English |
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Pages (from-to) | 570-574 |
Number of pages | 5 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 74 |
Issue number | 4 |
DOIs | |
State | Published - 04 2013 |
Keywords
- A. Amorphous materials
- A. Oxides
- A. Semiconductors
- D. Electrical properties