Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics

Fa Hsyang Chen, Meng Ning Hung, Jui Fu Yang, Shou Yi Kuo, Jim Long Her, Yasuhiro H. Matsuda, Tung Ming Pan*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

43 Scopus citations

Abstract

We investigated the effect of surface roughness on the electrical characteristics in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) fabricating high-κ Sm2O3 gate dielectrics, prepared under different annealing temperatures. The high-κ Sm2O3 a-IGZO TFT device annealed at 200 °C exhibited better electrical characteristics, including a large field effect mobility of 6.25 cm2/V s, small threshold voltage of 0.79 V, low subthreshold swing of 354 mV/decade, and high Ion/Ioff ratio of 3.1×107. These results are attributed to the formation of smooth surface at the oxide/channel interface. Furthermore, the reliability of a Sm2O3 a-IGZO TFT device can be improved by oxygen annealing at low temperature.

Original languageEnglish
Pages (from-to)570-574
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume74
Issue number4
DOIs
StatePublished - 04 2013

Keywords

  • A. Amorphous materials
  • A. Oxides
  • A. Semiconductors
  • D. Electrical properties

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