Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

Kuang Po Hsueh, Yi Sheng Chang, Bo Hong Li, Hsiang Chun Wang, Hsien Chin Chiu*, Chih Wei Hu, Rong Xuan

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

18 Scopus citations

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