Effect of Ti doping concentration on resistive switching behaviors of Yb 2O 3 memory cell

Somnath Mondal; Hung Yu Chen; Jim Long Her; Fu Hsiang Ko; Tung Ming Pan

doi:10.1063/1.4747695

Effect of Ti doping concentration on resistive switching behaviors of Yb ₂O ₃ memory cell

Somnath Mondal^*, Hung Yu Chen, Jim Long Her, Fu Hsiang Ko, Tung Ming Pan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

30 Scopus citations

Abstract

We investigate the resistive memory switching behaviors of Yb ₂O ₃ thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb ₂O ₃ thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb ₂O ₃ memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics.

Original language	English
Article number	083506
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4747695
State	Published - 20 08 2012

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title = "Effect of Ti doping concentration on resistive switching behaviors of Yb 2O 3 memory cell",

abstract = "We investigate the resistive memory switching behaviors of Yb 2O 3 thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb 2O 3 thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb 2O 3 memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics.",

author = "Somnath Mondal and Chen, {Hung Yu} and Her, {Jim Long} and Ko, {Fu Hsiang} and Pan, {Tung Ming}",

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T1 - Effect of Ti doping concentration on resistive switching behaviors of Yb 2O 3 memory cell

AU - Mondal, Somnath

AU - Chen, Hung Yu

AU - Her, Jim Long

AU - Ko, Fu Hsiang

AU - Pan, Tung Ming

PY - 2012/8/20

Y1 - 2012/8/20

N2 - We investigate the resistive memory switching behaviors of Yb 2O 3 thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb 2O 3 thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb 2O 3 memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics.

AB - We investigate the resistive memory switching behaviors of Yb 2O 3 thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb 2O 3 thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb 2O 3 memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics.

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JO - Applied Physics Letters

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Effect of Ti doping concentration on resistive switching behaviors of Yb ₂O ₃ memory cell

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