Effect of Yb-doping on structural and electrical properties of BiFeO3 thin films

Tung Ming Pan; Yu Cheng Chou; Jim Long Her

doi:10.1016/j.matchemphys.2022.125699

Effect of Yb-doping on structural and electrical properties of BiFeO₃ thin films

Tung Ming Pan^*, Yu Cheng Chou, Jim Long Her

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

In this paper, the incorporation of ytterbium into the BiFeO₃ thin film was fabricated on the Pt/Ti/SiO₂/Si substrates by using both dc and rf magnetron co-sputtering method at room temperature. The impact of ytterbium content on structural properties and electrical characteristics of the BiFeO₃ thin films was investigated. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy techniques were applied to examine the crystal structures, elemental compositions, microstructures, and film morphologies of these thin films, respectively. The Yb-doped BiFeO₃ thin film fabricated at the 11 W condition exhibited the lowest leakage current and the highest remnant polarization among these conditions. This result is attributed to the formation of a stronger BiFeO₃ (202) component leading to the decrease in oxygen vacancies.

Original language	English
Article number	125699
Journal	Materials Chemistry and Physics
Volume	278
DOIs	https://doi.org/10.1016/j.matchemphys.2022.125699
State	Published - 15 02 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

BiFeO
Co-sputtering method
Yb-doped
Ytterbium

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10.1016/j.matchemphys.2022.125699

Cite this

@article{b9ccf75445c3445fbd01b9159c834d25,

title = "Effect of Yb-doping on structural and electrical properties of BiFeO3 thin films",

abstract = "In this paper, the incorporation of ytterbium into the BiFeO3 thin film was fabricated on the Pt/Ti/SiO2/Si substrates by using both dc and rf magnetron co-sputtering method at room temperature. The impact of ytterbium content on structural properties and electrical characteristics of the BiFeO3 thin films was investigated. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy techniques were applied to examine the crystal structures, elemental compositions, microstructures, and film morphologies of these thin films, respectively. The Yb-doped BiFeO3 thin film fabricated at the 11 W condition exhibited the lowest leakage current and the highest remnant polarization among these conditions. This result is attributed to the formation of a stronger BiFeO3 (202) component leading to the decrease in oxygen vacancies.",

keywords = "BiFeO, Co-sputtering method, Yb-doped, Ytterbium",

author = "Pan, {Tung Ming} and Chou, {Yu Cheng} and Her, {Jim Long}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = feb,

day = "15",

doi = "10.1016/j.matchemphys.2022.125699",

language = "英语",

volume = "278",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effect of Yb-doping on structural and electrical properties of BiFeO3 thin films

AU - Pan, Tung Ming

AU - Chou, Yu Cheng

AU - Her, Jim Long

PY - 2022/2/15

Y1 - 2022/2/15

N2 - In this paper, the incorporation of ytterbium into the BiFeO3 thin film was fabricated on the Pt/Ti/SiO2/Si substrates by using both dc and rf magnetron co-sputtering method at room temperature. The impact of ytterbium content on structural properties and electrical characteristics of the BiFeO3 thin films was investigated. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy techniques were applied to examine the crystal structures, elemental compositions, microstructures, and film morphologies of these thin films, respectively. The Yb-doped BiFeO3 thin film fabricated at the 11 W condition exhibited the lowest leakage current and the highest remnant polarization among these conditions. This result is attributed to the formation of a stronger BiFeO3 (202) component leading to the decrease in oxygen vacancies.

AB - In this paper, the incorporation of ytterbium into the BiFeO3 thin film was fabricated on the Pt/Ti/SiO2/Si substrates by using both dc and rf magnetron co-sputtering method at room temperature. The impact of ytterbium content on structural properties and electrical characteristics of the BiFeO3 thin films was investigated. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy techniques were applied to examine the crystal structures, elemental compositions, microstructures, and film morphologies of these thin films, respectively. The Yb-doped BiFeO3 thin film fabricated at the 11 W condition exhibited the lowest leakage current and the highest remnant polarization among these conditions. This result is attributed to the formation of a stronger BiFeO3 (202) component leading to the decrease in oxygen vacancies.

KW - BiFeO

KW - Co-sputtering method

KW - Yb-doped

KW - Ytterbium

UR - http://www.scopus.com/inward/record.url?scp=85122322115&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2022.125699

DO - 10.1016/j.matchemphys.2022.125699

M3 - 文章

AN - SCOPUS:85122322115

SN - 0254-0584

VL - 278

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

M1 - 125699

ER -