Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O3 thin films on Al2O3 buffered Si for one-transistor memory applications

Chia Liang Sun; Jung Jui Hsu; San Yuan Chen; Albert Chin

doi:10.1149/1.1542901

Effect of Zr/Ti ratios on characterization of Pb(Zr_xTi_1-x)O₃ thin films on Al₂O₃ buffered Si for one-transistor memory applications

Chia Liang Sun^*
, Jung Jui Hsu
, San Yuan Chen
, Albert Chin

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

Pb(Zr_xTi_1-x)O₃ (PZT) thin films have been prepared on Al₂O₃/Si and PbTiO₃/Al₂O₃/Si substrates, respectively. On Al₂O₃/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO₃ was used as the seeding layer on Al₂O₃/Si to form a PbTiO₃/Al₂O₃/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO₃/Al₂O₃/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO₃/Al₂O₃/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.

Original language	English
Pages (from-to)	G187-G191
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	3
DOIs	https://doi.org/10.1149/1.1542901
State	Published - 03 2003
Externally published	Yes

Access to Document

10.1149/1.1542901

Cite this

@article{7daf9883a06e409a819e1abc400eab50,

title = "Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O3 thin films on Al2O3 buffered Si for one-transistor memory applications",

abstract = "Pb(ZrxTi1-x)O3 (PZT) thin films have been prepared on Al2O3/Si and PbTiO3/Al2O3/Si substrates, respectively. On Al2O3/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO3 was used as the seeding layer on Al2O3/Si to form a PbTiO3/Al2O3/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO3/Al2O3/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO3/Al2O3/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.",

author = "Sun, \{Chia Liang\} and Hsu, \{Jung Jui\} and Chen, \{San Yuan\} and Albert Chin",

year = "2003",

month = mar,

doi = "10.1149/1.1542901",

language = "英语",

volume = "150",

pages = "G187--G191",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O3 thin films on Al2O3 buffered Si for one-transistor memory applications

AU - Sun, Chia Liang

AU - Hsu, Jung Jui

AU - Chen, San Yuan

AU - Chin, Albert

PY - 2003/3

Y1 - 2003/3

N2 - Pb(ZrxTi1-x)O3 (PZT) thin films have been prepared on Al2O3/Si and PbTiO3/Al2O3/Si substrates, respectively. On Al2O3/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO3 was used as the seeding layer on Al2O3/Si to form a PbTiO3/Al2O3/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO3/Al2O3/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO3/Al2O3/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.

AB - Pb(ZrxTi1-x)O3 (PZT) thin films have been prepared on Al2O3/Si and PbTiO3/Al2O3/Si substrates, respectively. On Al2O3/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO3 was used as the seeding layer on Al2O3/Si to form a PbTiO3/Al2O3/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO3/Al2O3/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO3/Al2O3/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.

UR - https://www.scopus.com/pages/publications/0037350717

U2 - 10.1149/1.1542901

DO - 10.1149/1.1542901

M3 - 文章

AN - SCOPUS:0037350717

SN - 0013-4651

VL - 150

SP - G187-G191

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Effect of Zr/Ti ratios on characterization of Pb(Zr_xTi_1-x)O₃ thin films on Al₂O₃ buffered Si for one-transistor memory applications

Abstract

Access to Document

Other files and links

Fingerprint

Cite this