Effective mobility and alloy scattering in the strain compensated SiGeC inversion layer

G. S. Kar, S. Maikap, S. K. Ray*, S. K. Banerjee, N. B. Chakrabarti

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

6 Scopus citations

Abstract

Partially strain compensated Si/Si0.793Ge0.2C0.007/Si heterojunction p-MOSFET devices have been used to calculate the hole mobility in buried SiGeC channels and to estimate the dominant scattering mechanisms in the carbon-containing Si alloy. The current contribution of the buried SiGeC channel to the total drain current has been found by using a simple analysis based on the inversion layer mobility model. The 'true' effective mobility in the buried channel of the fabricated Si0.793Ge0.2C0.007 PMOSFET device has thus been extracted over a temperature range of 77-300 K. The alloy scattering limited mobility and the coefficient (Kf) associated with field-dependent mobility have been estimated from an effective mobility plot at liquid-nitrogen temperature. A quantitative estimation of C-induced alloy scattering potential is reported for the first time.

Original languageEnglish
Pages (from-to)471-475
Number of pages5
JournalSemiconductor Science and Technology
Volume17
Issue number5
DOIs
StatePublished - 05 2002
Externally publishedYes

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