Abstract
Partially strain compensated Si/Si0.793Ge0.2C0.007/Si heterojunction p-MOSFET devices have been used to calculate the hole mobility in buried SiGeC channels and to estimate the dominant scattering mechanisms in the carbon-containing Si alloy. The current contribution of the buried SiGeC channel to the total drain current has been found by using a simple analysis based on the inversion layer mobility model. The 'true' effective mobility in the buried channel of the fabricated Si0.793Ge0.2C0.007 PMOSFET device has thus been extracted over a temperature range of 77-300 K. The alloy scattering limited mobility and the coefficient (Kf) associated with field-dependent mobility have been estimated from an effective mobility plot at liquid-nitrogen temperature. A quantitative estimation of C-induced alloy scattering potential is reported for the first time.
Original language | English |
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Pages (from-to) | 471-475 |
Number of pages | 5 |
Journal | Semiconductor Science and Technology |
Volume | 17 |
Issue number | 5 |
DOIs | |
State | Published - 05 2002 |
Externally published | Yes |